Zobrazeno 1 - 10
of 660
pro vyhledávání: '"Largeau, L."'
Autor:
Nath, S., Turan, I., Desvignes, L., Largeau, L., Mauguin, O., Túnica, M., Amato, M., Renard, C., Hallais, G., Débarre, D., Chiodi, F.
Superconductivity in ultra-doped $Si_{1-x}Ge_{x}:B$ epilayers is demonstrated by nanosecond laser doping, which allows introducing substitutional B concentrations well above the solubility limit and up to $7\,at.\%$. A Ge fraction $x$ ranging from 0
Externí odkaz:
http://arxiv.org/abs/2404.02748
Autor:
Jublot-Leclerc, S., Bouhali, G., Bachelet, C., Pallier, F., Largeau, L., Declémy, A., Gentils, A.
Publikováno v:
In Journal of the European Ceramic Society November 2024 44(14)
Autor:
Cornet, C., Charbonnier, S., Lucci, I., Chen, L., Letoublon, A., Alvarez, A., Tavernier, K., Rohel, T., Bernard, R., Rodriguez, J. -B., Cerutti, L., Tournie, E., Leger, Y., Patriarche, G., Largeau, L., Ponchet, A., Turban, P., Bertru, N.
Publikováno v:
Phys. Rev. Materials 4, 053401 (2020)
Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with two distinct nucleation-driven and terraces-driven regimes. It is then
Externí odkaz:
http://arxiv.org/abs/2001.05386
We report on the synthesis of new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350$^\circ$C and 1550$^\circ$C. The structure and stoichiometry of this compound are investigated
Externí odkaz:
http://arxiv.org/abs/1903.09400
Autor:
Lucci, I., Charbonnier, S., Pedesseau, L., Vallet, M., Cerutti, L., Rodriguez, J. -B., Tournie, E., Bernard, R., Letoublon, A., Bertru, N., Corre, A. Le, Rennesson, S., Semond, F., Patriarche, G., Largeau, L., Turban, P., Ponchet, A., Cornet, C.
Publikováno v:
Phys. Rev. Materials 2, 060401 (2018)
Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is
Externí odkaz:
http://arxiv.org/abs/1804.02358
Autor:
Carbillet, C., Caprara, S., Grilli, M., Brun, C., Cren, T., Debontridder, F., Vignolle, B., Tabis, W., Demaille, D., Largeau, L., Ilin, K., Siegel, M., Roditchev, D., Leridon, B.
Publikováno v:
Phys. Rev. B 93, 144509 (2016)
The microscopic nature of an insulating state in the vicinity of a superconducting state, in the presence of disorder, is a hotly debated question. While the simplest scenario proposes that Coulomb interactions destroy the Cooper pairs at the transit
Externí odkaz:
http://arxiv.org/abs/1507.08955
Autor:
Pelati, D., Patriarche, G., Largeau, L., Mauguin, O., Travers, L., Brisset, F., Glas, F., Oehler, F.
Publikováno v:
In Thin Solid Films 31 January 2020 694
Autor:
Ruiz-Caridad, A., Marcaud, G., Ramirez, J.M., Durán-Valdeiglesias, E., Lafforgue, C., Zhang, J., Largeau, L., Maroutian, T., Matzen, S., Alonso-Ramos, C., Collin, S., Agnus, G., Guerber, S., Baudot, C., Boeuf, F., Monfray, S., Crémer, S., Vakarin, V., Cassan, E., Marris-Morini, D., Lecoeur, P., Vivien, L.
Publikováno v:
In Thin Solid Films 1 January 2020 693
Autor:
Pelati, D., Patriarche, G., Mauguin, O., Largeau, L., Travers, L., Brisset, F., Glas, F., Oehler, F.
Publikováno v:
In Journal of Crystal Growth 1 August 2019 519:84-90
Autor:
Vennéguès, P., Largeau, L., Brändli, V., Damilano, B., Tavernier, K., Bernard, R., Courville, A., Rennesson, S., Semond, F., Feuillet, G., Cornet, C.
Publikováno v:
Journal of Applied Physics; 10/28/2022, Vol. 132 Issue 16, p1-10, 10p