Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Larentis, Stefano"'
Autor:
Kim, Kyounghwan, Prasad, Nitin, Movva, Hema C. P., Burg, G. William, Wang, Yimeng, Larentis, Stefano, Taniguchi, Takashi, Watanabe, Kenji, Register, Leonard F., Tutuc, Emanuel
We investigate interlayer tunneling in heterostructures consisting of two tungsten diselenide (WSe2) monolayers with controlled rotational alignment, and separated by hexagonal boron nitride. In samples where the two WSe2 monolayers are rotationally
Externí odkaz:
http://arxiv.org/abs/1809.02639
Autor:
Larentis, Stefano, Movva, Hema C. P., Fallahazad, Babak, Kim, Kyoughwan, Behroozi, Armad, Taniguchi, Takashi, Watanabe, Kenji, Banerjee, Sanjay K., Tutuc, Emanuel
Publikováno v:
Phys. Rev. B 97, 201407(R) (2018)
We study the magnetotransport of high-mobility electrons in monolayer and bilayer MoSe$_2$, which show Shubnikov-de Haas (SdH) oscillations and quantum Hall states in high magnetic fields. An electron effective mass of 0.8$m_e$ is extracted from the
Externí odkaz:
http://arxiv.org/abs/1804.10104
Autor:
Movva, Hema C. P., Lovorn, Timothy, Fallahazad, Babak, Larentis, Stefano, Kim, Kyounghwan, Taniguchi, Takashi, Watanabe, Kenji, Banerjee, Sanjay K., MacDonald, Allan H., Tutuc, Emanuel
Publikováno v:
Phys. Rev. Lett. 120, 107703 (2018)
We present a combined experimental and theoretical study of valley populations in the valence bands of trilayer WSe$_2$. Shubnikov$-$de Haas oscillations show that trilayer holes populate two distinct subbands associated with the $K$ and $\Gamma$ val
Externí odkaz:
http://arxiv.org/abs/1801.03474
Autor:
Kim, Kyounghwan, DaSilva, Ashley, Huang, Shengqiang, Fallahazad, Babak, Larentis, Stefano, Taniguchi, Takashi, Watanabe, Kenji, LeRoy, Brian J., MacDonald, Allan H., Tutuc, Emanuel
Publikováno v:
Proc. Natl. Acad. Sci. U.S.A. 114, 3364 (2017)
According to electronic structure theory, bilayer graphene is expected to have anomalous electronic properties when it has long-period moir\'e patterns produced by small misalignments between its individual layer honeycomb lattices. We have realized
Externí odkaz:
http://arxiv.org/abs/1703.00888
Autor:
Movva, Hema C. P., Fallahazad, Babak, Kim, Kyounghwan, Larentis, Stefano, Taniguchi, Takashi, Watanabe, Kenji, Banerjee, Sanjay K., Tutuc, Emanuel
Publikováno v:
Phys. Rev. Lett. 118, 247701 (2017)
We report a study of the quantum Hall states (QHSs) sequence of holes in mono- and bilayer WSe$_2$. The QHSs sequence transitions between predominantly even and predominantly odd filling factors as the hole density is tuned in the range $1.6 - 12\tim
Externí odkaz:
http://arxiv.org/abs/1702.05166
Autor:
Rai, Amritesh, Valsaraj, Amithraj, Movva, Hema C. P., Roy, Anupam, Ghosh, Rudresh, Sonde, Sushant, Kang, Sangwoo, Chang, Jiwon, Trivedi, Tanuj, Dey, Rik, Guchhait, Samaresh, Larentis, Stefano, Register, Leonard F., Tutuc, Emanuel, Banerjee, Sanjay K.
Publikováno v:
Nano Lett., 2015, 15(7), pp 4329-4336
To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dichalcogenides (TMDs), considerable effort has been put into exploring var
Externí odkaz:
http://arxiv.org/abs/1604.06850
Autor:
Fallahazad, Babak, Movva, Hema C. P., Kim, Kyounghwan, Larentis, Stefano, Taniguchi, Takashi, Watanabe, Kenji, Banerjee, Sanjay K., Tutuc, Emanuel
Publikováno v:
Phys. Rev. Lett. 116, 086601 (2016)
We study the magnetotransport properties of high mobility holes in monolayer and bilayer WSe$_2$, which display well defined Shubnikov-de Haas (SdH) oscillations, and quantum Hall states (QHSs) in high magnetic fields. In both mono and bilayer WSe$_2
Externí odkaz:
http://arxiv.org/abs/1602.01073
Autor:
Fallahazad, Babak, Lee, Kayoung, Kang, Sangwoo, Xue, Jiamin, Larentis, Stefano, Corbet, Christopher, Kim, Kyounghwan, Movva, Hema C. P., Taniguchi, Takashi, Watanabe, Kenji, Register, Leonard F., Banerjee, Sanjay K., Tutuc, Emanuel
Publikováno v:
Nano Lett. 15, 428 (2015)
We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride (hBN) dielectr
Externí odkaz:
http://arxiv.org/abs/1412.3027
Autor:
Yankowitz, Matthew, Larentis, Stefano, Kim, Kyounghwan, Xue, Jiamin, McKenzie, Devin, Huang, Shengqiang, Paggen, Marina, Ali, Mazhar N., Cava, Robert J., Tutuc, Emanuel, LeRoy, Brian J.
Publikováno v:
Nano Lett. 15, 1925-1929 (2015)
The electronic properties of two-dimensional materials such as graphene are extremely sensitive to their environment, especially the underlying substrate. Planar van der Waals bonded substrates such as hexagonal boron nitride (hBN) have been shown to
Externí odkaz:
http://arxiv.org/abs/1411.6597
Publikováno v:
Applied Physics Letters 104, 141603 (2014)
Using an ab initio density functional theory (DFT) based electronic structure method, we study the effects of adatoms on the electronic properties of monolayer transition metal dichalcogenide (TMD) Molybdenum-disulfide (MoS2). We consider the 1st (Li
Externí odkaz:
http://arxiv.org/abs/1305.7162