Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Lardizabal, S.M."'
Autor:
Hoke, W.E. *, Kennedy, T.D., Torabi, A., Whelan, C.S., Marsh, P.F., Leoni, R.E., Lardizabal, S.M., Zhang, Y., Jang, J.H., Adesida, I., Xu, C., Hsieh, K.C.
Publikováno v:
In Journal of Crystal Growth 2003 251(1):804-810
Publikováno v:
Whelan, C.S. ; Marsh, P.F. ; Lardizabal, S.M. ; Hoke, W.E. ; McTaggart, R.A. ; Kazior, T.E. (2000) Low Noise and Power Metamorphic HEMT Devices and Circuits with X=30% to 60% InxGaAs Channels on GaAs Substrates. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
Metamorphic HEMTs (MHEMTs) are becoming the device of choice for low cost millimeter-wave applications, where a high indium content channel is necessary for high performance. This paper will review the material properties, the processing, and the dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42daafc1adcdcc27a59756fccfc9cc41
http://amsacta.unibo.it/248/
http://amsacta.unibo.it/248/
Autor:
Whelan, C.S., Lardizabal, S.M., Buhles, P.M., Hoke, W.E., Marsh, P.F., McTaggart, R.A., McCarroll, C.P., Kazior, T.E.
Publikováno v:
Conference Proceedings 2000 International Conference on Indium Phosphide & Related Materials (Cat. No.00CH37107); 2000, p349-352, 4p
Autor:
Buhles, P.M., Lardizabal, S.M.
Publikováno v:
2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096); 2000, p221-225, 5p
Publikováno v:
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 21st Annual Technical Digest 1999 (Cat No99CH36369); 1999, p135-138, 4p
Autor:
Whelan, C.S., Marsh, P.F., Leoni III, R.E., Hoke, W.E., Lardizabal, S.M., Lichwala, S.J., Zhang, Y., Balas, P., Kazior, T.E.
Publikováno v:
International Journal of High Speed Electronics & Systems; Mar2003, Vol. 13 Issue 1, p65, 25p
Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates.
Autor:
Whelan, C.S., Marsh, P.F., Hoke, W.E., McTaggart, R.A., Lyman, P.S., Lemonias, P.J., Lardizabal, S.M., Leoni, R.E., III., Lichwala, S.J., Kazior, T.E.
Publikováno v:
IEEE Journal of Solid-State Circuits; Sep2000, Vol. 35 Issue 9, p1307-1311, 5p
Publikováno v:
IEEE Transactions on Microwave Theory & Techniques; 1996, Vol. 44 Issue 3, p357-363, 7p
Autor:
Marsh, P., Kang, S., Wohlert, R., McIntosh, P.M., Hoke, W.E., McTaggart, R.A., Lardizabal, S.M., Leoni, R.E., Whelan, C.S., Lemonias, P.J., Kazior, T.E.
Publikováno v:
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 21st Annual Technical Digest 1999 (Cat No99CH36369); 1999, p221-223, 3p
Conference
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