Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates.

Autor: Hoke, W. E., Lemonias, P. J., Mosca, J. J., Lyman, P. S., Torabi, A., Marsh, P. F., McTaggart, R. A., Lardizabal, S. M., Hetzler, K.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1999, Vol. 17 Issue 3, p1131-1135, 5p