Zobrazeno 1 - 10
of 582
pro vyhledávání: '"Lara, David A."'
Autor:
Ghasemi, Foad, Frisenda, Riccardo, Flores, Eduardo, Papadopoulos, Nikos, Biele, Robert, de Lara, David Perez, van der Zant, Herre S. J., Watanabe, Kenji, Taniguchi, Takashi, D'Agosta, Roberto, Ares, Jose R., Sánchez, Carlos, Ferrer, Isabel J., Castellanos-Gomez, Andres
Publikováno v:
Nanomaterials, 10(4), 711, 2020
In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to w
Externí odkaz:
http://arxiv.org/abs/2006.06842
Autor:
Martinez-Cartagena, Manuel Eduardo, Muzzio, Nicolas, Romero, Gabriela, Bernal-Martinez, Juan, Martinez-Lara, David, Moncivaiz-Medina, Jorge, Román-Aguirre, Manuel, Aguilar-Eguezabal, Alfredo, Cuando-Espitia, Natanael
Publikováno v:
In Materials Today Chemistry December 2023 34
Publikováno v:
In Journal of Cleaner Production 20 July 2023 411
Autor:
Niu, Yue, Frisenda, Riccardo, Flores, Eduardo, Ares, Jose R., Jiao, Weicheng, de Lara, David Perez, Sanchez, Carlos, Wang, Rongguo, Ferrer, Isabel J., Castellanos-Gomez, Andres
Publikováno v:
Advanced Optical Materials, 2018, vol. 6, no 19, p. 1800351
The capability to detect the polarization state of light is crucial in many day-life applications and scientific disciplines. Novel anisotropic two-dimensional materials such as TiS3 combine polarization sensitivity, given by the in-plane optical ani
Externí odkaz:
http://arxiv.org/abs/1903.11705
Autor:
Gant, Patricia, Huang, Peng, de Lara, David Pérez, Guo, Dan, Frisenda, Riccardo, Castellanos-Gomez, Andres
Strain engineering, which aims to tune the bandgap of a semiconductor by the application of strain, has emerged as an interesting way to control the electrical and optical properties of two-dimensional (2D) materials. Apart from the changes in the in
Externí odkaz:
http://arxiv.org/abs/1902.02802
Autor:
Diao, Lingxue, Liu, Yingda, Chen, Feifei, Pan, Hong, Lara, David Pérez de, Liu, Hui, Cheng, Yahui, Luo, Feng
Publikováno v:
In Materials Reports: Energy February 2023 3(1)
Autor:
Zhao, Qinghua, Frisenda, Riccardo, Gant, Patricia, de Lara, David Perez, Munuera, Carmen, Garcia-Hernandez, Mar, Niu, Yue, Wang, Tao, Jie, Wanqi, Castellanos-Gomez, Andres
Publikováno v:
Advanced Functional Materials, (2018) 1805304
Gallium selenide (GaSe) is a novel two-dimensional material, which belongs to the layered III-VIA semiconductors family and attracted interest recently as it displays single-photon emitters at room temperature and strong optical non-linearity. Noneth
Externí odkaz:
http://arxiv.org/abs/1810.06214
Autor:
Gant, Patricia, Ghasemi, Foad, Maeso, David, Munuera, Carmen, López-Elvira, Elena, Frisenda, Riccardo, De Lara, David Pérez, Rubio-Bollinger, Gabino, Garcia-Hernandez, Mar, Castellanos-Gomez, Andres
Publikováno v:
Beilstein J Nanotechnol. 2017; 8: 2357-2362
We study mechanically exfoliated nanosheets of franckeite by quantitative optical microscopy. The analysis of transmission mode and epi-illumination mode optical microscopy images provides a rapid method to estimate the thickness of the exfoliated fl
Externí odkaz:
http://arxiv.org/abs/1810.05215
Autor:
Niu, Yue, Gonzalez-Abad, Sergio, Frisenda, Riccardo, Marauhn, Philipp, Drüppel, Matthias, Gant, Patricia, Schmidt, Robert, Taghavi, Najme S., Barcons, David, Molina-Mendoza, Aday J., de Vasconcellos, Steffen Michaelis, Bratschitsch, Rudolf, De Lara, David Perez, Rohlfing, Michael, Castellanos-Gomez, Andres
Publikováno v:
Nanomaterials 2018, 8(9), 725
The research field of two dimensional (2D) materials strongly relies on optical microscopy characterization tools to identify atomically thin materials and to determine their number of layers. Moreover, optical microscopy-based techniques opened the
Externí odkaz:
http://arxiv.org/abs/1810.04745
Autor:
Frisenda, Riccardo, Schmidt, Robert, de Vasconcellos, Steffen Michaelis, Bratschitsch, Rudolf, de Lara, David Perez, Castellanos-Gomez, Andres
Strain engineering in single-layer semiconducting transition metal dichalcogenides aims to tune their bandgap energy and to modify their optoelectronic properties by the application of external strain. In this paper we study transition metal dichalco
Externí odkaz:
http://arxiv.org/abs/1804.11095