Zobrazeno 1 - 10
of 106
pro vyhledávání: '"Lanzillo, Nicholas"'
Autor:
Kumar, Sushant, Tu, Yi-Hsin, Sheng, Luo, Lanzillo, Nicholas A., Chang, Tay-Rong, Liang, Gengchiau, Sundararaman, Ravishankar, Lin, Hsin, Chen, Ching-Tzu
Publikováno v:
npj Comput Mater 10, 84 (2024)
Protected surface states arising from non-trivial bandstructure topology in semimetals can potentially enable new device functionalities in compute, memory, interconnect, sensing, and communication. This necessitates a fundamental understanding of su
Externí odkaz:
http://arxiv.org/abs/2211.10426
Autor:
Lien, Shang-Wei, Garate, Ion, Bajpai, Utkarsh, Huang, Cheng-Yi, Hsu, Chuang-Han, Tu, Yi-Hsin, Lanzillo, Nicholas A., Bansil, Arun, Chang, Tay-Rong, Liang, Gengchiau, Lin, Hsin, Chen, Ching-Tzu
Publikováno v:
npj Quantum Mater. 8, 3 (2023)
Nontrivial band topologies in semimetals lead to robust surface states that can contribute dominantly to the total conduction. This may result in reduced resistivity with decreasing feature size contrary to conventional metals, which may highly impac
Externí odkaz:
http://arxiv.org/abs/2209.06135
Publikováno v:
Phys. Rev. Applied 18, 034053 (2022)
We assess the viability of topological semimetals for application in advanced interconnect technology, where conductor size is on the order of a few nanometers and grain boundaries are expected to be prevalent. We investigate the electron transport p
Externí odkaz:
http://arxiv.org/abs/2206.08214
Autor:
Chen, Ching-Tzu, Bajpai, Utkarsh, Lanzillo, Nicholas A., Hsu, Chuang-Han, Lin, Hsin, Liang, Gengchiau
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM), 32.4. 1-32.4. 4
The resistance bottleneck in metal-interconnect scaling calls for new interconnect materials. This paper explores topological semimetals as a potential solution. After reviewing the desirable properties of topological semimetals for back-end-of-line
Externí odkaz:
http://arxiv.org/abs/2103.10505
Autor:
Philip, Timothy M., Lanzillo, Nicholas A., Gunst, Tue, Markussen, Troels, Cobb, Jonathan, Aboud, Shela, Robison, Robert R.
Publikováno v:
Phys. Rev. Applied 13, 044045 (2020)
As the semiconductor industry turns to alternate conductors to replace Cu for future interconnect nodes, much attention as been focused on evaluating the electrical performance of Ru. The typical hexagonal close-packed (hcp) phase has been extensivel
Externí odkaz:
http://arxiv.org/abs/2001.02216
Akademický článek
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Akademický článek
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Autor:
Lanzillo, Nicholas A., Nayak, Saroj K.
The structural, electronic and vibrational properties of atomic wires composed of the early alkali metals lithium and sodium are studied using density functional perturbation theory. The s-like electronic states near the Fermi level couple very weakl
Externí odkaz:
http://arxiv.org/abs/1408.3031
Autor:
Lanzillo, Nicholas, Birdwell, A. Glen, Amani, Matin, Crowne, Frank J., Shah, Pankaj B., Najmaei, Sina, Liu, Zheng, Ajayan, Pulickel M., Lou, Jun, Dubey, Madan, Nayak, Saroj K., O'Regan, Terrance P.
We present a combined experimental and computational study of two-dimensional molybdenum disulfde (MoS2) and the effect of temperature on the frequency shifts of the Raman-active E2g and A1g modes in the monolayer. While both peaks show an expected r
Externí odkaz:
http://arxiv.org/abs/1307.2447
Autor:
Lanzillo, Nicholas A., Briggs, Benjamin D., Robison, Robert R., Standaert, Theo, Lavoie, Christian
Publikováno v:
In Computational Materials Science 15 February 2019 158:398-405
