Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Lanxia Cheng"'
Autor:
Moon J. Kim, Arul Vigneswar Ravichandran, Antonio T. Lucero, Woong Choi, Hui Zhu, Jaebeom Lee, Zifan Che, Jiyoung Kim, Archana Venugopal, Lanxia Cheng, Robert M. Wallace, Luigi Colombo, Jaidah Mohan, Massimo Catalano
Publikováno v:
ACS Applied Materials & Interfaces. 12:36688-36694
Hexagonal boron nitride (h-BN) has been considered a promising dielectric for two-dimensional (2D) material-based electronics due to its atomically smooth and charge-free interface with an in-plane lattice constant similar to that of graphene. Here,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6934698ed2cd4820027ad44722337a45
https://doi.org/10.1021/acsami.0c07548
https://doi.org/10.1021/acsami.0c07548
Autor:
Son Hoang, Vijay K. Narasimhan, Valerio Adinolfi, Lanxia Cheng, Karl A. Littau, Ryan Clarke, Simone Balatti, Mario Laudato
Publikováno v:
ACS Nano. 13:10440-10447
Chalcogenide compounds are the main characters in a revolution in electronic memories. These materials are used to produce ultrafast ovonic threshold switches (OTSs) with good selectivity and moderate leakage current and phase-change memories (PCMs)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9aa8a0902fc2cbf61bdff5d56d32ff10
https://doi.org/10.1021/acsnano.9b04233
https://doi.org/10.1021/acsnano.9b04233
Autor:
Byung Keun Hwang, Gary Goodman, Lanxia Cheng, Harrison Sejoon Kim, Aswin L. N. Kondusamy, Xin Meng, Antonio T. Lucero, Si Joon Kim, Jiyoung Kim, Alan S. Wan, Su Min Hwang, Young-Chul Byun, Telgenhoff Michael D, Joy S. Lee, Robert M. Wallace
Publikováno v:
ACS Applied Materials & Interfaces. 10:44825-44833
Correlations between physical properties linking film quality with wet etch rate (WER), one of the leading figures of merit, in plasma-enhanced atomic layer deposition (PEALD) grown silicon nitride (SiNx) films remain largely unresearched. Achieving
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23472c32f3fe282a6779bcd299a81952
https://doi.org/10.1021/acsami.8b15291
https://doi.org/10.1021/acsami.8b15291
Autor:
Jiyoung Kim, Luigi Colombo, Arul Vigneswar Ravichandran, Jaebeom Lee, Archana Venugopal, Arup Polley, Antonio T. Lucero, Lanxia Cheng, Chadwin D. Young
Publikováno v:
ECS Transactions. 86:51-57
Graphene, an allotrope of carbon, shows ambipolar transfer characteristics with a linear dispersion relation where the conduction and valence band meets at the Dirac point 1. Owing to an absence of bandgap, it is not feasible to use graphene in logic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cdf487083f0219184f79cde60f9b36b9
https://doi.org/10.1149/08602.0051ecst
https://doi.org/10.1149/08602.0051ecst
Publikováno v:
ACS Applied Materials & Interfaces. 10:3732-3738
Low-temperature solution processing of p-type transparent conducting oxides (TCOs) will open up new opportunities for applications on flexible substrates that utilize low-cost, large-area manufacturing. Here, we report a facile solution synthesis met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8392534d8695b420a85b996de6ca8b3
https://doi.org/10.1021/acsami.7b13680
https://doi.org/10.1021/acsami.7b13680
Autor:
Lanxia Cheng1,2 lanxia.cheng@utdallas.edu
Publikováno v:
Materials (1996-1944). Dec2016, Vol. 9 Issue 12, p1016. 14p. 5 Diagrams, 2 Charts, 1 Graph.
Autor:
Hui Zhu, Rafik Addou, Robert M. Wallace, Moon J. Kim, Lanxia Cheng, Jiyoung Kim, Qingxiao Wang
Publikováno v:
ACS Nano. 11:11005-11014
Understanding the structural stability of transition-metal dichalcogenides is necessary to avoid surface/interface degradation. In this work, the structural stability of 2H-MoTe2 with thermal treatments up to 500 °C is studied using scanning tunneli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07e9894399bc4b3d65992fb9f57152d9
https://doi.org/10.1021/acsnano.7b04984
https://doi.org/10.1021/acsnano.7b04984
Autor:
Qingxiao Wang, Lanxia Cheng, Moon J. Kim, Hui Zhu, Luigi Colombo, Robert M. Wallace, Jaebeom Lee, Arul Vigneswar Ravichandran, Jiyoung Kim, Antonio T. Lucero
Publikováno v:
ACS Nano. 11:10243-10252
The successful realization of high-performance 2D-materials-based nanoelectronics requires integration of high-quality dielectric films as a gate insulator. In this work, we explore the integration of organic and inorganic hybrid dielectrics on MoS2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dc5aedf14601de6d55290b056dea49a
https://doi.org/10.1021/acsnano.7b04813
https://doi.org/10.1021/acsnano.7b04813
Autor:
Moon J. Kim, Jiyoung Kim, Yun Ju Lee, Lanxia Cheng, Julia W. P. Hsu, Diego Barrera, Qingxiao Wang
Publikováno v:
Journal of Materials Chemistry C. 5:2859-2864
Two-dimensional transition metal dichalcogenides (TMDs) exhibit a wide range of properties depending on the chemistry of the transition metal element and the chalcogen, making them promising candidates for electronic applications. Current TMD thin fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91de3c44d1e7d6258d337831bb410305
https://doi.org/10.1039/c6tc05097b
https://doi.org/10.1039/c6tc05097b
Autor:
Qingxiao Wang, Xiaoye Qin, Joerg Appenzeller, Christopher L. Hinkle, Robert M. Wallace, Ning Lu, Rafik Addou, Moon J. Kim, Angelica Azcatl, Abhijith Prakash, Kyeongjae Cho, Jiyoung Kim, Lanxia Cheng, Chenxi Zhang
Publikováno v:
Nano Letters. 16:5437-5443
Controllable doping of two-dimensional materials is highly desired for ideal device performance in both hetero- and p-n homojunctions. Herein, we propose an effective strategy for doping of MoS2 with nitrogen through a remote N2 plasma surface treatm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::daa0c2a9b720671fd7eedd80e0883c01
https://doi.org/10.1021/acs.nanolett.6b01853
https://doi.org/10.1021/acs.nanolett.6b01853