Study of GaInP heterojunction solar cell interface properties by admittance spectroscopy

Autor: Gudovskikh, A.S., Kleider, Jean-Paul, Chouffot, Rémy, Kaluzhniy, N.A., Lantratov, V., Mintairov, S.A.

Publikováno v: Proceedings of 23rd European Photovoltaic Solar Energy Conference and Exhibition
23rd European Photovoltaic Solar Energy Conference and Exhibition
23rd European Photovoltaic Solar Energy Conference and Exhibition, Sep 2008, Valencia, Spain. pp.CD-ROM Proceedings

23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 358-363
The capability of the admittance spectroscopy for the GaInP heterojunction interface properties study was demonstrated using both exp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ebd1edf540c7e31ce51a5e553ff646fe
https://centralesupelec.hal.science/hal-00351244

Structure of the Dark J-V Characteristic of Multijunction Solar Cells and Their Efficiency

Autor: Kalinovsky, V.S., Evstropov, V., Kalyuzhnyy, N., Lantratov, V., Mintairov, S.A., Andreev, V.M.

23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 773-776
The dark resistanceless (not accounting for the series resistance) current-voltage characteristic of a multijunction (MJ) and singlej

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::21b9b81d3fe395fe8c8c280ad2ef60c0

In-Situ Monitoring During MOCVD Growth of the Triple-Junction GaInP/Ga(In)As/Ge Solar Cells

Autor: Kalyuzhnyy, N., Lantratov, V., Mintairov, S.A., Mintairov, M.A., Shvarts, M.Z., Timoshina, N., Andreev, V.M.

23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 803-810
The possibilities for combined analysis of the triple-junction GaInP/GaInAs/Ge solar cells (SC) grown by the MOCVD technique with the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::033c24337d44de90f38506cb7c0cf3ea

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Formation of defect-free InGaAs-GaAs quantum dots for 1.3 ?m spectral range grown by metal-organic chemical vapor deposition

Autor: Krestnikov, I. L., Ledentsov, N. N., Mikhail Maximov, Bimberg, D., Bedarev, D. A., Kochnev, I. V., Lantratov, V. M., Cherkashin, N. A., Musikhin, Yu G., Alferov, Zh I.

Publikováno v: Proceedings of the 8th International Symposium Nanostructures: Physics and Technology
Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, 2000, pp.355-358
Scopus-Elsevier

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2acf63619f82339d15e8c0f0e4427d38
https://hal.archives-ouvertes.fr/hal-01736132