Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Langrez, D."'
Autor:
Robin, C., Delcourt, S., Theocharis, J., Neyrolles, K., Langrez, D., Latti, J., Papaioannou, G.
Publikováno v:
In Microelectronics Reliability November 2023 150
Publikováno v:
In Microelectronics Reliability September 2019 100-101
Publikováno v:
In Microelectronics Reliability 2005 45(9):1611-1616
Lumped-element RF analog multi-band bandpass filter concept for software-defined-radio architectures
Autor:
Khelifi, W., Reveyrand, T., Quéré, R., Lapierre, L., Armengaud, V., Langrez, D., Gomez-Garcia, Roberto, Munoz-Ferreras, Jose-Maria, Psychogiou, Dimitra, Addou, Mohammed Adnan, Lintignat, Julien, Barelaud, Bruno, Jarry, B.
Publikováno v:
2017 15th IEEE International New Circuits and Systems Conference (NEWCAS)
2017 15th IEEE International New Circuits and Systems Conference (NEWCAS), Jun 2017, Strasbourg, France. pp.101-104, ⟨10.1109/NEWCAS.2017.8010115⟩
NEWCAS
2017 15th IEEE International New Circuits and Systems Conference (NEWCAS), Jun 2017, Strasbourg, France. pp.101-104, ⟨10.1109/NEWCAS.2017.8010115⟩
NEWCAS
Future software-defined radios (SDRs) for modern wireless applications—e.g., 5G communications—could require reconfigurable RF analog circuits to enable multistandard/service operation with hardware miniaturization. In this context, a lumped-elem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8998d5c776dddbb4d23fd18e71461539
https://hal.archives-ouvertes.fr/hal-02479056
https://hal.archives-ouvertes.fr/hal-02479056
Autor:
Addou, M. Adnan, Hijazi, Ragheb, Gomez-Garcia, Roberto, Barelaud, Bruno, Khelifi, W., Reveyrand, T., Lintignat, Julien, Jarry, Bernard, Quéré, R., Lapierre, L., Armengaud, V., Langrez, D.
Publikováno v:
2017 89th ARFTG Microwave Measurement Conference (ARFTG)
2017 89th ARFTG Microwave Measurement Conference (ARFTG), Jun 2017, Honololu, France. pp.1-4, ⟨10.1109/ARFTG.2017.8000844⟩
2017 89th ARFTG Microwave Measurement Conference (ARFTG), Jun 2017, Honololu, France. pp.1-4, ⟨10.1109/ARFTG.2017.8000844⟩
This paper presents an extension of a three step de-embedding (Pad-Open-Short) method to a 3-port device for accurate on wafer MMIC S-parameters measurements. In the proposed method, an equivalent circuit-model using lumped elements is established ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7840386a0c3ecf8673a89ab1b5084b53
https://doi.org/10.1109/arftg.2017.8000844
https://doi.org/10.1109/arftg.2017.8000844
Autor:
Do, M.N., Suijker, E.M., Heijningen, M. van, Vliet, F.E. van, Seelmann-Eggebert, M., Quay, R., Langrez, D., Cazaux, J-L.
Publikováno v:
Microwave Technology and Techniques Workshop 2010, 10-12 May 2010, Noordwijk, The Netherlands
In space applications, due to the large number of sources of interferences, RF receivers have to be as robust as possible to maintain good operation of the satellite. The system must maintain its performance under severe jamming conditions and the pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::7e173e7b0aafbea1ff048568d03cc359
http://resolver.tudelft.nl/uuid:6d774af5-d137-4656-8113-a4354c8437d2
http://resolver.tudelft.nl/uuid:6d774af5-d137-4656-8113-a4354c8437d2
Publikováno v:
Ismail, N. ; Malbert, N. ; Labat, N. ; Touboul, A. ; Muraro, J-L. ; Brasseau, F. ; Langrez, D. (2005) On-state safe operating area of GaAs MESFET defined for non linear applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
This paper provides a new approach to evaluate the transistor safe operating area at nominal operating conditions which has been demonstrated on MESFET technology. It consists on performing on-state and off-state accelerated DC step stresses for bias
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::621abf431b18795d4c358d560965c971
http://amsacta.unibo.it/1485/
http://amsacta.unibo.it/1485/
Publikováno v:
Langrez, D. ; Diette, F. ; Theron, D. ; Delos, E. ; Salmer, G. (1996) Dual gate pseudomorphic HEMT for low noise amplification in millimeter wave range. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
The purpose of this paper is to show the capabilities of the dual gate transistors for low noise amplification in the millimeter wave range. Single and dual gate 0.12um AlGaAs/InGaAs/GaAs pseudomorphic HEMTs have been designed and realized for this s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bfecddd60d40a0d792de63daa82c2b5f
http://amsacta.unibo.it/1680/
http://amsacta.unibo.it/1680/
Publikováno v:
Langrez, D. ; Duhamel, F. ; Delos, E. ; Salmer, G. (1994) Experimental extraction of equivalent scheme for dual gate field effect transistors. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
The purpose of this paper is to describe a new method that we have developped to determine accurately all the elements of dual gate FET equivalent scheme. The parasitic and intrinsic elements are separately determined by biasing the DGFET in 'cold' a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c58c41882d46aaa0a81edbd163896559
http://amsacta.unibo.it/1894/
http://amsacta.unibo.it/1894/
Publikováno v:
2012 7th European Microwave Integrated Circuit Conference; 2012, p127-130, 4p