Substrate temperature dependence of the roughness evolution of HWCVD a-Si:H studied by real-time spectroscopic ellipsometry

Autor: Kessels, W.M.M., Hoefnagels, J.P.M., Langereis, E., van de Sanden, M.C.M.

Publikováno v: In Thin Solid Films 2006 501(1):88-91

In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition.

Autor: Langereis, E., Heil, S. B. S., van de Sanden, M. C. M., Kessels, W. M. M.

Publikováno v: Journal of Applied Physics; 7/15/2006, Vol. 100 Issue 2, p023534, 10p, 1 Diagram, 2 Charts, 8 Graphs

Considering Fabry, but Diagnosing MPS I: Difficulties in the Diagnostic Process

Autor: Langereis, E. J., van den Berg, I. E. T., Halley, D. J. J., Poorthuis, B. J. H. M., Vaz, F. M., Wokke, J. H. J., Linthorst, G. E.

Publikováno v: JIMD reports, 9, 117-120. Springer Berlin

Introduction: Recent studies have indicated that a proportion of patients with renal failure, left ventricular hypertrophy, or cryptogenic stroke have sequence variants in their aGal A gene (Fabry disease), which has resulted in an increase in diagno

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::7e32dc9777883bbcfd19c2232d817dd3
https://pure.amc.nl/en/publications/considering-fabry-but-diagnosing-mps-i-difficulties-in-the-diagnostic-process(243d7fe3-7bda-4e7a-9e98-2b1b956ee91b).html

In situ spectroscopic ellipsometry for atomic layer deposition

Autor: Langereis, E., Heil, S.B.S., Knoops, H.C.M., Keuning, W., Sanden, van de, M.C.M., Kessels, W.M.M.

Publikováno v: Society of Vacuum Coaters Bulletin, 2010(spring), 36-41. Society of Vacuum Coaters
conference; 52nd Society of Vacuum Coaters Annual Technical Conference; 2009-05-01; 2009-05-01
SVC 52nd Annual Technical Conference, Santa Clara Convention Center, Santa Clara, CA, May 9-14, 2009, 61-66
STARTPAGE=61;ENDPAGE=66;TITLE=SVC 52nd Annual Technical Conference, Santa Clara Convention Center, Santa Clara, CA, May 9-14, 2009

The application of in situ spectroscopic ellipsometry during thin film synthesis by atomic layer deposition (ALD) is examined for results obtained on Al2O3, TaNx, and TiN films with thicknesses ranging from 0.1 to 100 nm. By analyzing the film thickn

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3da71008cdfbff13eafcc659411a49ea
https://research.tue.nl/nl/publications/6df061b4-9edd-4ab3-b905-9f5e7d7d4808

Thermal and Remote Plasma ALD of Ru from CpRu(CO)2Et and O2

Autor: Leick, N., Verkuijlen, R.O.F., Langereis, E., Rushworth, S.A., Roozeboom, F., Sanden, van de, M.C.M., Kessels, W.M.M.

Publikováno v: Proceedings of the 56th international American Vacuum Society Symposium & Exhibition (AVS 56) 8-13 November 2009, San Jose, California

Ruthenium (Ru) is regarded as an electrode candidate on ultrahigh-k SrTiO3 dielectric films for future high-density trench capacitors. To achieve conformal film growth, atomic layer deposition (ALD) of Ru is investigated. To this end, the use of an o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::57fc6e42669730d06dfcf3faf5f6d5da
https://research.tue.nl/nl/publications/e7107615-fdd0-4323-a392-8b77d84357ea