UIS Ruggedness of Parallel 4H-SiC MOSFETs

Autor: Steinmann, Philipp, Atzeri, Marco, Ji, In Hwan, Langan, Jared, Myers, Kevin, Oldham, Neal, Park, Jae Hyung, Potera, Rahul, Rinderer, Caleb, van Brunt, Edward

Publikováno v: Diffusion and Defect Data Part B: Solid State Phenomena; August 2024, Vol. 361 Issue: 1 p65-69, 5p