Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Lander, R.J.P."'
Autor:
Thomas, S.M., Whall, T.E., Parker, E.H.C., Leadley, D.R., Lander, R.J.P., Vellianitis, G., Watling, J.R.
Publikováno v:
In Solid State Electronics 2009 53(12):1252-1256
Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering
Autor:
Ferain, I., Duffy, R., Collaert, N., van Dal, M.J.H., Pawlak, B.J., O’Sullivan, B., Witters, L., Rooyackers, R., Conard, T., Popovici, M., van Elshocht, S., Kaiser, M., Weemaes, R.G.R., Swerts, J., Jurczak, M., Lander, R.J.P., De Meyer, K.
Publikováno v:
In Solid State Electronics 2009 53(7):760-766
Autor:
Schram, T., Ragnarsson, L.-Å, Lujan, G., Deweerd, W., Chen, J., Tsai, W., Henson, K., Lander, R.J.P., Hooker, J.C., Vertommen, J., Meyer, K. De, Gendt, S. De, Heyns, M.
Publikováno v:
In Microelectronics Reliability 2005 45(5):779-782
Autor:
Lander, R.J.P.
Publikováno v:
Journal of Applied Physics; 8/15/2000, Vol. 88 Issue 4, p2016, 8p, 2 Charts, 13 Graphs
Autor:
Lander, R.J.P., Emeleus, C.J., McGregor, B. M., Parker, E. H. C., Whall, T. E., Evans, A. G. R., Kennedy, G. P.
Publikováno v:
Journal of Applied Physics; 11/15/1997, Vol. 82 Issue 10, p5210, 7p, 1 Black and White Photograph, 1 Diagram, 1 Chart, 9 Graphs
Autor:
Thomas, S.M., Whall, T.E., Parker, E.H.C., Leadley, D.R., Lander, R.J.P., Vellianitis, G., Watling, J.R.
Publikováno v:
2009 10th International Conference on Ultimate Integration of Silicon; 2009, p31-34, 4p
First observation of FinFET specific mismatch behavior and optimization guidelines for SRAM scaling.
Autor:
Merelle, T., Curatola, G., Nackaerts, A., Collaert, N., van Dal, M.J.H., Doornbos, G., Doorn, T.S., Christie, P., Vellianitis, G., Duriez, B., Duffy, R., Pawlak, B.J., Voogt, F.C., Rooyackers, R., Witters, L., Jurczak, M., Lander, R.J.P.
Publikováno v:
2008 IEEE International Electron Devices Meeting; 2008, p1-4, 4p
Autor:
Subramanian, V., Parvais, B., Borremans, J., Mercha, A., Linten, D., Wambacq, P., Loo, J., Dehan, M., Collaert, N., Kubicek, S., Lander, R.J.P., Hooker, J.C., Cubaynes, F.N., Donnay, S., Jurczak, M., Groeseneken, G., Sansen, W., Decoutere, S.
Publikováno v:
IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest; 2005, p898-901, 4p
Autor:
Henson, K., Lander, R.J.P., Demand, M., Dachs, C.J.J., Kaczer, B., Deweerd, W., Schram, T., Tokei, Z., Hooker, J.C., Cubaynes, F.N., Beckx, S., Boullart, W., Coenegrachts, B., Vertommen, J., Richard, O., Bender, H., Vandervorst, W., Kaiser, M., Everaert, J.-L., Jurczak, M.
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004; 2004, p851-854, 4p
Autor:
Ponomarev, Y.V., Loo, J.J.G.P., Rittersma, Z.M., Lander, R.J.P., Hooker, J.C., Doornbos, G., Surdeanu, R., Cubaynes, F.N., Dachs, C.J.J., Kubicek, S., Henson, K., Lindsay, R.
Publikováno v:
ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003; 2003, p27-30, 4p