Device and circuit-level analog performance trade-offs

Autor: Subramanian, V., Parvais, Bertrand, Mercha, A., Linten, Dimitri, Wamback, Patrick, Loo, Josine, Dehan, M., Collaert, Nadine, Kubicek, S, Lander, R. J. P., Hooker, J.c., Cubaynes, F. N., Donnay, S., Jurczak, M., Groeseneken, G., Sansen, W., Decoutere, S.

Comparison of digital and analog Figures-of-Merit of FinFETs and planar bulk MOSFETs reveals an interesting trade-off in analog/RF design space. It is seen that FinFETs possess key advantages over bulk FETs for applications around 5 GHz where the per

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3848::8101ce9daf4c84a15c4bc12266b18b71
https://biblio.vub.ac.be/vubir/device-and-circuitlevel-analog-performance-tradeoffs(49d854f8-4a8e-455a-bfb0-c8a96485f9ff).html

High precision frequency synthesizer based on MEMS piezoresistive resonator.

Autor: Phan, K. L., van Ansem, T., van der Avoort, C., van Beek, J. T. M., Goossens, M. J., Jose, S., Lander, R. J. P., Menten, S., Naass, T., Sistermans, J., Stikvoort, E., Swartjes, F., Wortel, K., in't Zandt, M. A. A.

Publikováno v: 2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators & Microsystems (TRANSDUCERS & EUROSENSORS XXVII); 2013, p802-805, 4p

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Control of a Metal-Electrode Work Function by Solid-State Diffusion of Nitrogen.

Autor: Lander, R. J. P., Hooker, J. C., van Zijl, J. P., Roozeboom, F., Maas, M. P. M., Tamminga, Y., Wolter, R. A. M.

Publikováno v: MRS Online Proceedings Library; 2002, Vol. 716 Issue 1, p1-6, 6p

On the low-temperature mobility of holes in gated oxide Si/SiGe heterostructures.

Autor: Lander, R J P, Kearney, M J, Horrell, A I, Parker, E H C, Phillips, P J, Whall, T E

Publikováno v: Semiconductor Science & Technology; 1997, Vol. 12 Issue 9, p1064-1071, 8p