Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Lancaster, Suzanne"'
Autor:
Lancaster, Suzanne, Remillieux, Maximilien, Engl, Moritz, Havel, Viktor, Silva, Claudia, Wang, Xuetao, Mikolajick, Thomas, Slesazeck, Stefan
Ferroelectric tunnel junctions (FTJs) are a class of memristor which promise low-power, scalable, field-driven analog operation. In order to harness their full potential, operation with identical pulses is targeted. In this paper, several weight upda
Externí odkaz:
http://arxiv.org/abs/2407.15796
A wakeup scheme for ferroelectric thin Hf$_{0.5}$Zr$_{0.5}$O$_2$ films is presented, based on a gradual switching approach using multiple short pulses with a voltage amplitude roughly equal to the coercive voltage. This enables the on-chip wakeup and
Externí odkaz:
http://arxiv.org/abs/2312.08956
Autor:
Gibertini, Paolo, Fehlings, Luca, Lancaster, Suzanne, Duong, Quang, Mikolajick, Thomas, Dubourdieu, Catherine, Slesazeck, Stefan, Covi, Erika, Deshpande, Veeresh
Publikováno v:
2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
Event-based neuromorphic systems provide a low-power solution by using artificial neurons and synapses to process data asynchronously in the form of spikes. Ferroelectric Tunnel Junctions (FTJs) are ultra low-power memory devices and are well-suited
Externí odkaz:
http://arxiv.org/abs/2211.02598
HfO2-based ferroelectric tunnel junctions (FTJs) exhibit attractive properties for adoption in neuromorphic applications. The combination of ultra-low-power multi-level switching capability together with the low on-current density suggests the applic
Externí odkaz:
http://arxiv.org/abs/2209.10437
Autor:
Lancaster, Suzanne, Arnay, Iciar, Guerrero, Ruben, Gudín, Adrían, Mikolajick, Thomas, Perna, Paolo, Slesazeck, Stefan
Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was investigated. Different metals were deposited as nucleation layers via
Externí odkaz:
http://arxiv.org/abs/2208.14061
Autor:
Lancaster, Suzanne, Lomenzo, Patrick D, Engl, Moritz, Xu, Bohan, Mikolajick, Thomas, Schroeder, Uwe, Slesazeck, Stefan
Publikováno v:
Front. Nanotechnol., 17 August 2022
A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique can be used to investigate charge trapping in ferroelectric thin film
Externí odkaz:
http://arxiv.org/abs/2206.14593
Autor:
Narayanan, Shyam, Covi, Erika, Havel, Viktor, Frenkel, Charlotte, Lancaster, Suzanne, Duong, Quang, Slesazeck, Stefan, Mikolajick, Thomas, Payvand, Melika, Indiveri, Giacomo
Publikováno v:
2022 IEEE International Symposium on Circuits and Systems (ISCAS)
Novel non-volatile memory devices based on ferroelectric thin films represent a promising emerging technology that is ideally suited for neuromorphic applications. The physical switching mechanism in such films is the nucleation and growth of ferroel
Externí odkaz:
http://arxiv.org/abs/2202.04049
Autor:
Lancaster, Suzanne, Arnay, Iciar, Guerrero, Ruben, Gudín, Adrian, Guedeja-Marrón, Alejandra, Toledano, Jose Manuel Diez, Gärtner, Jan, Anadón, Alberto, Varela, Maria, Camarero, Julio, Mikolajick, Thomas, Perna, Paolo, Slesazeck, Stefan
Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tuneable, non-volatile memories. Here, the atomic layer deposition (ALD)
Externí odkaz:
http://arxiv.org/abs/2109.09543
Autor:
Covi, Erika, Duong, Quang T., Lancaster, Suzanne, Havel, Viktor, Coignus, Jean, Barbot, Justine, Richter, Ole, Klein, Philip, Chicca, Elisabetta, Grenouillet, Laurent, Dimoulas, Athanasios, Mikolajick, Thomas, Slesazeck, Stefan
Publikováno v:
2021 IEEE International Symposium on Circuits and Systems (ISCAS), 2021, pp. 1-5
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the imp
Externí odkaz:
http://arxiv.org/abs/2107.01853
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