Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Lan Hu Tran"'
Autor:
W.R. Curtice, Dale McMorrow, Lan Hu Tran, Alvin R. Knudson, Joseph S. Melinger, A.B. Campbell, Stephen P. Buchner
Publikováno v:
Journal of Applied Physics. 84:690-703
We use picosecond laser pulses to investigate single event upsets and related fundamental charge collection mechanisms in semiconductor microelectronic devices and circuits. By varying the laser wavelength the incident laser pulses deposit charge tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2e9543f420bb09d842baf7e70b88730
https://doi.org/10.1063/1.368124
https://doi.org/10.1063/1.368124
Autor:
A.B. Campbell, D. McMorrow, Lan Hu Tran, S. P. Buchner, Alvin R. Knudson, Joseph S. Melinger, Todd R. Weatherford
Publikováno v:
IEEE Transactions on Nuclear Science. 43:628-644
The single-event upset (SEU) characteristics of GaAs devices and circuits are reviewed. GaAs FET-based integrated circuits (ICs) are susceptible to upsets from both cosmic-ray heavy ions and protons trapped in the Earth's radiation belts. The origin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a3ac23234ed4f6f2160f80e04700821
https://doi.org/10.1109/23.490906
https://doi.org/10.1109/23.490906
Autor:
S. P. Buchner, Joseph S. Melinger, Lan Hu Tran, W.R. Curtice, Alvin R. Knudson, A.B. Campbell, Todd R. Weatherford, Dale McMorrow
Publikováno v:
IEEE Transactions on Nuclear Science. 42:1837-1843
The use of a low temperature grown GaAs (LT GaAs) buffer layer in GaAs FETs is shown via computer simulation and experimental measurement to reduce ion-induced charge collection by two to three orders of magnitude. This reduction in collected charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc992ea9c87224b164f87c9cd179d567
https://doi.org/10.1109/23.488787
https://doi.org/10.1109/23.488787
Autor:
Dale McMorrow, Lan Hu Tran, A.B. Campbell, Todd R. Weatherford, A. Peczalski, Joseph S. Melinger, Alvin R. Knudson, N. Thantu
Publikováno v:
IEEE Transactions on Nuclear Science. 41:2055-2062
Ion- and laser-induced charge-collection transients measured for AlGaAs-InGaAs hetero-insulated-gate field-effect transistors (HIGFETs) reveal evidence for two mechanisms of enhanced charge collection: a channel-modulation mechanism that dominates th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2405ee9137ea42830d8ffdd7cfa672d4
https://doi.org/10.1109/23.340542
https://doi.org/10.1109/23.340542
Autor:
S. Baiers, A. Peczalski, C.J. Dale, Joseph S. Melinger, A.B. Campbell, Lan Hu Tran, Alvin R. Knudson, P.W. Marshall, Todd R. Weatherford, Dale McMorrow, S. P. Buchner
Publikováno v:
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems.
The charge-collection characteristics of GaAs heterojunction-insulated-gate FETs fabricated with a low-temperature grown GaAs (LT GaAs) buffer layer are investigated as a function of device bias conditions for laser and ion irradiation. In accordance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc4ba12de05cb236facc6b40511c325e
https://doi.org/10.1109/radecs.1995.509805
https://doi.org/10.1109/radecs.1995.509805
Autor:
McMorrow, D., Weatherford, T.R., Knudson, A.R., Buchner, S., Melinger, J.S., Lan Hu Tran, Campbell, A.B., Marshall, P.W., Dale, C.J., Peczalski, A., Baiers, S.
Publikováno v:
Proceedings of the Third European Conference on Radiation & its Effects on Components & Systems; 1996, p373-378, 6p
Autor:
McMorrow, D., Weatherford, T.R., Buchner, S., Knudson, A.R., Melinger, J.S., Lan Hu Tran, Campbell, A.B.
Publikováno v:
IEEE Transactions on Nuclear Science; 1996, Vol. 43 Issue 2, p628-644, 17p
Autor:
McMorrow, D., Weatherford, T.R., Curtice, W.R., Knudson, A.R., Buchner, S., Melinger, J.S., Lan Hu Tran, Campbell, A.B.
Publikováno v:
IEEE Transactions on Nuclear Science; 1995, Vol. 42 Issue 6, p1837-1843, 7p
Autor:
McMorrow, D., Melinger, J.S., Thantu, N., Campbell, A.B., Weatherford, T.R., Knudson, A.R., Lan Hu Tran, Peczalski, A.
Publikováno v:
IEEE Transactions on Nuclear Science; 1994, Vol. 41 Issue 6, p2055-2062, 8p
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