Comparison of Al0.51In0.49P and Ga0.51In0.49P window layers for GaAs and GaInAsP solar cells

Autor: Jaakkola, R., Lammasniemi, J., Kazantsev, A.B., Tappura, K.

Publikováno v: Jaakkola, R, Lammasniemi, J, Kazantsev, A B & Tappura, K 1997, Comparison of Al0.51In0.49P and Ga0.51In0.49P window layers for GaAs and GaInAsP solar cells . in Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference . IEEE Institute of Electrical and Electronic Engineers, pp. 891-894, 26th Photovoltaic Specialists Conference, Anaheim, United States, 29/09/97 .

Two window layer materials, Al0.51In0.49P (Eg = 2.3 eV) and Ga0.51In0.49P (Eg = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga0.84In0.16As0.68P0.32 (Eg = 1.55 eV) solar cells. Due to the wider band-gap of Al0.51In0.49P,

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https://cris.vtt.fi/en/publications/3f4d3754-a5b0-4d21-a517-6d52369ef851

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