Zobrazeno 1 - 10
of 244
pro vyhledávání: '"Lambert Alff"'
Autor:
Oscar Recalde-Benitez, Tianshu Jiang, Robert Winkler, Yating Ruan, Alexander Zintler, Esmaeil Adabifiroozjaei, Alexey Arzumanov, William A. Hubbard, Tijn van Omme, Yevheniy Pivak, Hector H. Perez-Garza, B. C. Regan, Lambert Alff, Philipp Komissinskiy, Leopoldo Molina-Luna
Publikováno v:
Communications Engineering, Vol 2, Iss 1, Pp 1-8 (2023)
Abstract Advanced nanomaterials are at the core of innovation for the microelectronics industry. Designing, characterizing, and testing two-terminal devices, such as metal-insulator-metal structures, is key to improving material stack design and inte
Externí odkaz:
https://doaj.org/article/67949337b138489992379497c532492b
Autor:
Niclas Schmidt, Nico Kaiser, Tobias Vogel, Eszter Piros, Silvia Karthäuser, Rainer Waser, Lambert Alff, Regina Dittmann
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 4, Pp n/a-n/a (2024)
Abstract HfO2 is one of the most common memristive materials and it is widely accepted that oxygen vacancies are prerequisite to reduce the forming voltage of the respective memristive devices. Here, a series of six oxygen engineered substoichiometri
Externí odkaz:
https://doaj.org/article/ddb528388adf4513a1d5e4f9632d29f1
Autor:
Alexander Zintler, Robert Eilhardt, Stefan Petzold, Sankaramangalam Ulhas Sharath, Enrico Bruder, Nico Kaiser, Lambert Alff, Leopoldo Molina-Luna
Publikováno v:
ACS Omega, Vol 7, Iss 2, Pp 2041-2048 (2022)
Externí odkaz:
https://doaj.org/article/4544d395f30543679ab62e6eadb9c068
Autor:
Robert Winkler, Alexander Zintler, Stefan Petzold, Eszter Piros, Nico Kaiser, Tobias Vogel, Déspina Nasiou, Keith P. McKenna, Leopoldo Molina‐Luna, Lambert Alff
Publikováno v:
Advanced Science, Vol 9, Iss 33, Pp n/a-n/a (2022)
Abstract Resistive random‐access memories are promising candidates for novel computer architectures such as in‐memory computing, multilevel data storage, and neuromorphics. Their working principle is based on electrically stimulated materials cha
Externí odkaz:
https://doaj.org/article/aae7e74c78ff4b93b6b77cf8d0629c7b
Publikováno v:
AIP Advances, Vol 12, Iss 3, Pp 035116-035116-4 (2022)
The double perovskite La2NiMnO6 (LNMO) exhibits complex magnetism due to the competition of magnetic interactions that are strongly affected by structural and magnetic inhomogeneities. In this work, we study the effect of oxygen annealing on the stru
Externí odkaz:
https://doaj.org/article/caeb0c475d0f414780af82757cacce0f
Autor:
Fernando Leonel Aguirre, Eszter Piros, Nico Kaiser, Tobias Vogel, Stephan Petzold, Jonas Gehrunger, Timo Oster, Christian Hochberger, Jordi Suñé, Lambert Alff, Enrique Miranda
Publikováno v:
Micromachines, Vol 13, Iss 11, p 2002 (2022)
In this paper, the use of Artificial Neural Networks (ANNs) in the form of Convolutional Neural Networks (AlexNET) for the fast and energy-efficient fitting of the Dynamic Memdiode Model (DMM) to the conduction characteristics of bipolar-type resisti
Externí odkaz:
https://doaj.org/article/0778e1bfd57e43c3a3355152b404b96a
Autor:
Gang Niu, Pauline Calka, Peng Huang, Sankaramangalam Ulhas Sharath, Stefan Petzold, Andrei Gloskovskii, Karol Fröhlich, Yudi Zhao, Jinfeng Kang, Markus Andreas Schubert, Florian Bärwolf, Wei Ren, Zuo-Guang Ye, Eduardo Perez, Christian Wenger, Lambert Alff, Thomas Schroeder
Publikováno v:
Materials Research Letters, Vol 7, Iss 3, Pp 117-123 (2019)
The HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the mic
Externí odkaz:
https://doaj.org/article/bfa1280cf60d4b379358b352d3ab6ba9
Publikováno v:
APL Materials, Vol 9, Iss 4, Pp 041107-041107-9 (2021)
Here, we demonstrate the electrochemical fluorination of La2CuO4 in an all-solid-state cell. This method of fluorine intercalation is controllable and reproducible, offering a precise adjustment of hole doping and thus tuning of superdiamagnetic (i.e
Externí odkaz:
https://doaj.org/article/7ca9466173dd47fd8561b6a66f422807
Autor:
Juliette Cardoletti, Aldin Radetinac, Daniel Thiem, Julian Walker, Philipp Komissinskiy, Bai-Xiang Xu, Helmut Schlaak, Susan Trolier-McKinstry, Lambert Alff
Publikováno v:
AIP Advances, Vol 9, Iss 2, Pp 025017-025017-13 (2019)
In this work, a model to describe the vertical deflection of ferroelectric bending tongues with a load at their free end is proposed. The model is based on the ferroelectric switching criterion developed by Hwang et al. [“Ferroelectric/ferroelastic
Externí odkaz:
https://doaj.org/article/3722896815dd4588a9614b90b8758b99
Publikováno v:
APL Materials, Vol 4, Iss 11, Pp 116104-116104-6 (2016)
In this work, combining experimental results and first principles calculations, we show that interstitial nitrogen not only serves for inducing tetragonality in α′-Fe8Nx but is also essential for achieving a high degree of perpendicular magneto-cr
Externí odkaz:
https://doaj.org/article/0d2b13e08d744912b2eac57a3b6322f3