Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Lam Zi Yi"'
Publikováno v:
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE).
A three-stage 0.18μm CMOS power amplifier (PA) targeted for 3.1 to 4.8 GHz WiMedia Ultra-Wideband (UWB) system is discussed in this paper. The first and the last stage of the proposed PA are the conventional common source (CS) inductive degeneration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48ec421fe7798b87aaea5d9fe6ead640
https://doi.org/10.1109/smelec.2012.6417204
https://doi.org/10.1109/smelec.2012.6417204
Publikováno v:
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE).
Solar trackers rely on a direct-current (DC) motor driver circuit to control the movement of the solar panel. However, conventional DC motor drivers used in solar tracking system do not provide any options for speed and torque control. Hence, the fix
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7926d4cc5cce3c456b53ebaba2cac331
https://doi.org/10.1109/smelec.2012.6417207
https://doi.org/10.1109/smelec.2012.6417207
Publikováno v:
2009 34th IEEE Photovoltaic Specialists Conference (PVSC).
This paper presents a cost efficient PV charge controller with the function to disconnect and reconnect battery and load during battery overcharging or under discharging. The proposed charge controller is equipped with LCD to display the temperature,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88b1465c35df7409164192969c638c43
https://doi.org/10.1109/pvsc.2009.5411210
https://doi.org/10.1109/pvsc.2009.5411210
Autor:
Lam Zi Yi, Nowshad Amin
Publikováno v:
2008 IEEE International Conference on Semiconductor Electronics.
The root causes of the mechanical limitations are analyzed and their damages to the device-under-test (DUT) lead are demonstrated in this study. The evolution of microelectronics toward more densely packed contacts in a much smaller foot print has se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2debb9a945d96b7a7426061e4353fb4d
https://doi.org/10.1109/smelec.2008.4770348
https://doi.org/10.1109/smelec.2008.4770348
Publikováno v:
2008 33rd IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT).
Various reflow profiles have been applied on different no-clean fluxes amount in removing the oxide layer of high lead solder bump. The wafers exposed to open air induce an oxide layer on the high lead solder bump. This oxide layer eventually creates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::175b570551d92e244c40f3fe57609589
https://doi.org/10.1109/iemt.2008.5507833
https://doi.org/10.1109/iemt.2008.5507833
Publikováno v:
2013 IEEE Symposium on Wireless Technology & Applications (ISWTA); 2013, p306-309, 4p
Publikováno v:
2009 34th IEEE Photovoltaic Specialists Conference (PVSC); 2009, p001094-001097, 4p
Publikováno v:
2008 33rd IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT); 2008, p1-6, 6p
Publikováno v:
2008 IEEE International Conference on Semiconductor Electronics; 2008, p393-397, 5p