Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Lakshmanan Karuppiah"'
Autor:
Sidney P. Huey, Dhandapani Siva, Jun Qian, Balaji Chandrasekaran, Stan D. Tsai, Doyle E. Bennett, Kun Xu, Bogdan Swedek, Lakshmanan Karuppiah, Jeff David
Publikováno v:
ECS Transactions. 44:543-552
New CMP steps are required to define the structures for new integration schemes for high-k metal gate and FinFET. The performance and yield of these new devices directly depend on CMP control of film thickness variation. As a consequence, CMP require
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4cc31da1acd3c887114ea77b5e174b9
https://doi.org/10.1149/1.3694367
https://doi.org/10.1149/1.3694367
Publikováno v:
ECS Transactions. 27:533-538
Through-silicon via (TSV), an emerging technology for 3D IC manufacturing, involves fabrication of vertical vias through the wafers. The two methods commonly used involve "via-first" and "via-last" process flows. While the via-last approach appears t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5783ee65b39f2083a1bc81f518b90dec
https://doi.org/10.1149/1.3360670
https://doi.org/10.1149/1.3360670
Autor:
Max Gage, Yuchun Wang, Kun Xu, Sherry Xia, Lakshmanan Karuppiah, You Wang, Wen-Chiang Tu, Yufei Chen
Publikováno v:
ECS Transactions. 33:147-155
In this paper, we discuss CMP technology for Cu interconnects with a Co seed enhancement liner (SEL) and Cu with a Ru barrier. Typical forms of galvanic corrosion for each type of barrier are also reviewed. To meet CMP performance requirements, speci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f451a4ae811485f9d33e38a449cc63b
https://doi.org/10.1149/1.3501041
https://doi.org/10.1149/1.3501041
Autor:
Hassan G. Iravani, May Yu, Sherry Xia, Kun Xu, Yuchun Wang, Bogdan Swedek, Lakshmanan Karuppiah, Yufei Chen, You Wang, Wen-Chiang Tu
Publikováno v:
ECS Transactions. 33:69-76
Because the gate height is critical to transistor performance, controlling gate height precisely and uniformly is the primary challenge for the replacement metal gate aluminum CMP process. A real-time profile control (RTPC) method was combined with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b54940e078077565c34f323ad334c7bf
https://doi.org/10.1149/1.3489047
https://doi.org/10.1149/1.3489047
Autor:
Chenhao Ge, Feng Q. Liu, Yufei Chen, Mengqi Ye, Anja Rosenbusch, Kun Xu, Yuchun Wang, Alain Duboust, Sherry Xia, Wen-Chiang Tu, Lakshmanan Karuppiah
Publikováno v:
ECS Transactions. 19:73-79
Since the CMP process depends on chemical and mechanical effects, the interaction with the physical and chemical properties of the GST alloy play very important roles during the CMP process. In this paper, the impact of the CMP process on a soft GST
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3b534f5fdd396e62795920508a0db07
https://doi.org/10.1149/1.3123776
https://doi.org/10.1149/1.3123776
Publikováno v:
ECS Transactions. 19:83-90
The requirements for copper post-CMP cleaning include slurry particle removal, organic residue removal, metal contamination reduction, water mark elimination, copper corrosion prevention, and low-k surface change minimization. The difficulty in meeti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ee130419199291efd72d92bacc4afa4
https://doi.org/10.1149/1.3123777
https://doi.org/10.1149/1.3123777
Autor:
Haichun Yang, Naomi Yoshida, W. Ch. Tu, X. Xia, L. W. Chang, You Wang, M. Okazaki, Z. Ge, Kun Xu, Shih-Haur Shen, B. Liu, M. Allen, Lakshmanan Karuppiah, Adam Brand, Yu Lei
Publikováno v:
MRS Proceedings. 1372
For the gate last approach of a high K metal gate scheme used in advanced CMOS technology, various materials were tested as wetting layers to allow Aluminum (Al) gap fill at gate widths of10 to 45 nanometers. In this study, Titanium (Ti) and Cobalt (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7704fa60f1e5fac569975b935fac269b
https://doi.org/10.1557/opl.2012.113
https://doi.org/10.1557/opl.2012.113
Autor:
Garlen C. Leung, Christopher Heung-Gyun Lee, Sean Cui, Thomas H. Osterheld, Balaji Chandrasekaran, Lakshmanan Karuppiah, Anand N. Iyer, Jie Diao, Jun Qian
Publikováno v:
2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
The extension of Moore's Law at the 45/32nm nodes is made possible by the introduction of high-k metal gate. In the gate-last scheme to integrate high-k metal gate, planarization and surface topography control have been reported as some of the bigges
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8216c01421a5792b8a11c43859c2081d
https://doi.org/10.1109/asmc.2010.5551458
https://doi.org/10.1109/asmc.2010.5551458
Autor:
Lakshmanan Karuppiah, You Wang, Wen-Chiang Tu, Feng Liu, Yuchun Wang, Sherry Xia, Max Gage, Kun Xu
Publikováno v:
MRS Proceedings. 1249
Through-silicon via (TSV) 3-D packaging and integration present many new opportunities and challenges for metals CMP applications. For front-side TSV polishing, challenges include the removal of large amounts of copper overburden, dishing control dur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6b91814433e6c3e21bcd05e47a95b05
https://doi.org/10.1557/proc-1249-e01-07
https://doi.org/10.1557/proc-1249-e01-07
Autor:
Ingemar Carlsson, Doyle E. Bennett, Xinyun Xia, Shih-Haur Shen, Tzu-Yu Liu, You Wang, Kun Xu, Bogdan Swedek, Wen-Chiang Tu, Lakshmanan Karuppiah
Publikováno v:
ECS Meeting Abstracts. :2495-2495
Metal clearing in chemical mechanical polishing was conducted using a fixed polishing recipe, with polish pressures tuned based upon blanket metal film’s bulk removal uniformity. A fixed recipe cannot count for incoming film’s non-uniformity, pat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f2ab869aab7ccf9b686c6ca63374dcf
https://doi.org/10.1149/ma2012-02/29/2495
https://doi.org/10.1149/ma2012-02/29/2495