Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Laks Vanamurthy"'
Autor:
David Barge, Cyrille Le Royer, Anita Peeva, Thomas Feudel, Jens-Uwe Sachse, Heyne Tobias, Judson R. Holt, Aydin Omur Isil, Timothy J. McArdle, Markus Lenski, Christoph Klein, Laks Vanamurthy, Alexis Divay, Carsten Peters, Mulfinger George R, Elliot John Smith, Dirk Utess, Ralf Gerber, Steffen Lehmann, Sören Jansen
Publikováno v:
ECS Transactions. 86:199-206
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3819cee07309788290de4beede1db09c
https://doi.org/10.1149/08607.0199ecst
https://doi.org/10.1149/08607.0199ecst
Autor:
Uzma Rana, D. K. Sohn, Laks Vanamurthy, Mulfinger George R, Holm Geisler, Rick Carter, Kasun Punchihewa, Timothy J. McArdle, Beasor Scott, George Jonathan Kluth, Judson R. Holt, Dina H. Triyoso, Ryan Sporer, Jody A. Fronheiser, Jeremy A. Wahl, Amy Child
Publikováno v:
ECS Transactions. 85:3-10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e92d93b5c3491f3b4ae209852d1b2c56
https://doi.org/10.1149/08506.0003ecst
https://doi.org/10.1149/08506.0003ecst
Publikováno v:
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
SiGe FinFET devices have many unique device elements which differ from conventional Si FinFET devices. Here we discuss their threshold voltage sensitivity, stress profiles, long channel mobility behavior, and the presence of traps at the gate oxide i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17b731cc1e37d8cf544c6ce6e3ddc1f4
https://doi.org/10.23919/sispad.2017.8085338
https://doi.org/10.23919/sispad.2017.8085338
Autor:
Ömür Işıl Aydin, Judson Robert Holt, Laks Vanamurthy, Thomas Feudel, Cyrille Le Royer, Tobias Heyne, Ralf Gerber, Markus Lenski, George Robert Mulfinger, Timothy J McArdle, Sören Jansen, Dirk Utess, Christoph Klein, Anita Peeva, David Barge, Alexis Divay, Steffen Lehmann, Elliot Smith, Carsten Peters, Jens-Uwe Sachse
Publikováno v:
ECS Meeting Abstracts. :1072-1072
Recently, a 22nm fully depleted gate-first SOI technology (FDSOI) has shown significant promise as a low-cost alternative to FinFETs with devices that are tunable between low-leakage and high-performance regimes. [1] The 22nm FDSOI PFET utilizes a Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b7276ffa88fa0c2f0ac48deaf01e592
https://doi.org/10.1149/ma2018-02/31/1072
https://doi.org/10.1149/ma2018-02/31/1072