Zobrazeno 1 - 10
of 162
pro vyhledávání: '"Lajos Tóth"'
Autor:
Ten Pao Electronics Hungary Ltd., Miskolc, Hungary., Ákos Cservenák, Umetaliev Akylbek, Péter Tamás, Béla Illés, Lajos Tóth, Tamás Bányai
Publikováno v:
Journal of Production Engineering. 23:71-74
Publikováno v:
Multidiszciplináris tudományok. 10:403-412
Industry 4.0 technologies can improve not only the performance of manufacturing and assembly processes, but also the efficiency of related logistic operations can be increased. Within the frame of this article a system is shown for identifying produc
Autor:
Erika Hartmann, Zoltán Lóderer, András Vereczkei, György Lázár, Tamás Györke, György Bodoky, Zsuzsanna Papai, Péter Pajor, Oszkár Hahn, Barna Bogner, Károly Kalmár Nagy, Klára Mezei, Elemér Mohos, Zsolt Horváth, Eszter Székely, Magdolna Dank, Attila Doros, P. Á. Deák, Zsuzsa Schaff, Marianna Imre, István Sipőcz, Edit Dósa, Mihály Patyánik, László Mangel, László Harsányi, Péter Kupcsulik, I. Dudás, Péter Bartek, Kristóf Dede, András Papp, Ágnes Ruzsa, Zsolt Káposztás, József Lövey, István Battyáni, Laszlo Torday, Tamás Mersich, Attila Szijártó, Zoltan Mathe, László Sikorszki, László Damjanovich, Krisztina Schlachter, János Révész, Csilla András, Lajos Tóth, László Landherr, János Bezsilla, Erika Hitre, Tibor Csőszi, Zsófia Dankovics, Gábor István, András Palkó, Attila Bursics, András Petri, Ákos Szűcs, László Kóbori, Attila Oláh
Publikováno v:
Orvosi Hetilap. 160:2-20
Publikováno v:
Orvosi Hetilap. 160:839-843
Abstract: Benign multicystic peritoneal mesothelioma is a rare benign tumor originating from the peritoneum, affecting mostly young, fertile women. Its presentation is non-specific, thus the final diagnosis is made after the histological examination.
Autor:
Mohammed Alomari, Joachim N. Burghartz, Lajos Tóth, Clemens Wachter, Ildikó Cora, Lars Heuken, Thomas Bergunde, Béla Pécz, Muhammad Alshahed
Publikováno v:
IEEE Transactions on Electron Devices. 65:2939-2947
In this paper, the advantages of GaN high electron mobility transistors (HEMTs) grown on native GaN over GaN/Si or GaN/sapphire substrates are investigated and correlated with epitaxial material quality. Transmission electron microscopy plan-view and
Autor:
Antal Ürmös, Lajos Tóth, János Makai, Janos Balazs, Á. Nemcsics, László Dobos, Bálint Pődör, Márton Csutorás
Publikováno v:
Microelectronics Reliability. 59:60-63
In this work, we investigate the formation of the inverted technology created quantum dot by a method based on droplet epitaxy. The preparation process of the so called inverted quantum dot is carried out with the filling of the nano-hole. The invest
Autor:
Jan Kuzmik, O. Pohorelec, M. Ťapajna, Š. Haščík, Lajos Tóth, Béla Pécz, Stanislav Hasenöhrl, Roman Stoklas, F. Gucmann, A. Seifertová, Dagmar Gregušová
Publikováno v:
Applied Surface Science. 528:146824
Polarization engineering is a promising approach to achieve high positive threshold voltage (Vth) in GaN-based metal-oxide-semiconductor high electron mobility transistors (MOS HEMTs). In this paper, we investigate all critical interfaces of polariza
Autor:
Clemens Wachter, Lars Heuken, Alessandro Ottaviani, Béla Pécz, Thomas Bergunde, Ildikó Cora, Joachim N. Burghartz, Michael Heuken, Mohammed Alomari, Muhammad Alshahed, Lajos Tóth
Publikováno v:
physica status solidi (a).
Publikováno v:
2018 7th International Symposium on Next Generation Electronics (ISNE).
In this work, we are dealing with a novel technology, called droplet epitaxy, which is useful technique when quantum dots are to be produced, of different shape and size in various densities. There are self-assembling methods to achieve quantum dot e
Publikováno v:
Microscopy of Semiconducting Materials 2001 ISBN: 9781351074629
Inst. Phys. Conf. Ser. No 169 (2001) 367-370
Inst. Phys. Conf. Ser. No 169 (2001) 367-370
3C-SiC have been implanted with carbon ions at 60 keV to a dose of 3x10^17 and 1x10^18 cm^-2. All of the implantation experiments were carried out at elevated temperature in the range of 900°C-1200°C to study the phases, which are formed, when exce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::20f38aa03f602fd4f50d8e0a1394f89f
https://doi.org/10.1201/9781351074629-77
https://doi.org/10.1201/9781351074629-77