Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Laila-Parvin Poly"'
Autor:
Behrang Bagheri, Ranjith Kottokkaran, Laila-Parvin Poly, Ben Reichert, Saba Sharikadze, Max Noack, Vikram Dalal
Publikováno v:
AIP Advances, Vol 9, Iss 12, Pp 125012-125012-6 (2019)
We report on the growth, grain enhancement, doping, and electron mobility of cadmium selenide (CdSe) thin films deposited using the thermal evaporation method. The optical measurement shows CdSe is a direct bandgap material with an optical bandgap (E
Externí odkaz:
https://doaj.org/article/b9ddfe3bc52349f9b2ef971e1e1d9e39
Publikováno v:
IET Circuits, Devices and Systems, Vol 16, Iss 2, Pp 157-168 (2022)
Abstract This work presents a simplified analytical model of a p‐n junction diode based on a graphene nanoribbon (GNR) and a unique type of Schottky diode based on metallic graphene and semi‐conducting GNRs. Due to the one‐dimensional nature of
Externí odkaz:
https://doaj.org/article/90ee4a46e0564837a25b6b13c127e493
Inorganic Perovskite Solar Cells with High Voltage and Excellent Thermal and Environmental Stability
Autor:
Junhao Zhu, Ranjith Kottokkaran, Saba Sharikadze, Harshavardhan Gaonkar, Laila-Parvin Poly, Arkadi Akopian, Vikram L. Dalal
Publikováno v:
ACS Applied Energy Materials. 5:6265-6273
Publikováno v:
IET Circuits, Devices & Systems. 16:157-168
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
We report on the properties and stability of inorganic perovskite CsPbBr 3 fabricated using vapor deposition. We have obtained the highest voltage ever recorded, exceeding 1.6V, in this material. The material was deposited using vapor deposition proc
Autor:
Brian Mace, Laila-Parvin Poly, Behrang Bagheri, Max Noack, Ranjith Kottokkaran, Vikram L. Dalal
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
CdSe is potentially an important material for making tandem cells with Si. Previously, we have shown good performance in a hybrid p-i-n device, where the p layer was an organic semiconductor (P3HT or PEDOT:PSS) and the n layer was n-CdS. Here, we rep
Publikováno v:
Journal of Chemical Education. 97:97-105
In general chemistry laboratories, students learn practical laboratory skills through hands-on activities and are exposed to new scientific instruments. However, these instruments are often viewed ...
Autor:
Laila Parvin Poly, Ben Reichert, Vikram L. Dalal, Ranjith Kottokkaran, Behrang Bagheri, Max Noack, Saba Sharikadze
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
CdSe is potentially an important material for making tandem junction solar cells with Si. It has the right bandgap (1.72 eV) and is a direct gap material. But not much is known about its electronic properties. In this paper, we report on photovoltaic
Autor:
Vikram L. Dalal, Laila Parvin Poly, Junhao Zhu, Max Noack Behrang Bagheri, Ranjith Kottokkaran, Harshavardhan A. Gaonkar
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
We report on the fabrication, electronic and device properties of inorganic cesium-lead mixed halide perovskite solar cells. The p-i-n devices were deposited using a layer-by-layer technique, where alternate layers of cesium bromide and lead iodide w
Autor:
Ranjith Kottokkaran, Vikram L. Dalal, Behrang Bagheri, Max Noack, Ben Reichert, Saba Sharikadze, Laila-Parvin Poly
Publikováno v:
AIP Advances, Vol 9, Iss 12, Pp 125012-125012-6 (2019)
We report on the growth, grain enhancement, doping, and electron mobility of cadmium selenide (CdSe) thin films deposited using the thermal evaporation method. The optical measurement shows CdSe is a direct bandgap material with an optical bandgap (E