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pro vyhledávání: '"Laighton, D."'
Autor:
Whelan, C. S., Herrick, K., Leoni, R. E., Marsh, P. F., Zhang, Y., Lardizabal, S., Hoke, W. E., Lichwala, S., Kotce, J., Balas, P., Kazior, T. E., Laighton, D.
Publikováno v:
Whelan, C. S. ; Herrick, K. ; Leoni, R. E. ; Marsh, P. F. ; Zhang, Y. ; Lardizabal, S. ; Hoke, W. E. ; Lichwala, S. ; Kotce, J. ; Balas, P. ; Kazior, T. E. ; Laighton, D. (2003) W-band Metamorphic Low Noise and Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
Low noise metamorphic amplifiers fabricated on our 4” manufacturing line demonstrate 3.5 dB oise figure at 92 GHz. By tailoring the device’s material, geometry and processing, our device designers have achieved 320 mW/mm, 10 dB of small signal ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae8b693b7605444943de0450fedd3c50
http://amsacta.unibo.it/512/
http://amsacta.unibo.it/512/
Publikováno v:
1981 IEEE MTT-S International Microwave Symposium Digest; 1981, p37-39, 3p