Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Lai-Juh Chen"'
Kinematic Analysis and Measurement of Temperature Rise on a Pad in Chemical Mechanical Planarization
Publikováno v:
Journal of The Electrochemical Society. 146:4236-4239
Pad temperature measurement using a thermal camera during chemical mechanical planarization (CMP) process is an effective means for monitoring the pad life and removal uniformity. In this study, we present a novel kinematic analysis method based on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37f1eb651c69f39c90cb85dead4eb7ff
https://doi.org/10.1149/1.1392620
https://doi.org/10.1149/1.1392620
Publikováno v:
Journal of Applied Electrochemistry. 21:998-1004
Convective mass transfer phenomena become significant in sub-micrometre liquid phase epitaxial layer growth. An aqueous solution containing 0.01m K3Fe(CN)6+0.01m K4Fe(CN)6+1.0m KOH in a Plexiglass vessel was used to simulate the fluid motion and mass
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d776f8c4fff21a8f6a950b7c90ea400
https://doi.org/10.1007/bf01077586
https://doi.org/10.1007/bf01077586
Publikováno v:
Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247).
This paper describes a sub-0.2 /spl mu/m Al plug technology with aspect ratio higher than 4 by a two-step cold/hot sputtering using a long-throw sputtering PVD cluster tool for the first time. The key factors for excellent filling, including wetting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e57da537f5a5da59637056c10009c90
https://doi.org/10.1109/iitc.1999.787124
https://doi.org/10.1109/iitc.1999.787124
Publikováno v:
Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247).
To effectively improve and control copper polish performance, a thermal impact study and a process diagnosis methodology were explored and proposed in this paper for 0.18 /spl mu/m technology and beyond. Micro and macro thermal impacts on polishing o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f47534d96fd209f830455188768f07b
https://doi.org/10.1109/iitc.1999.787085
https://doi.org/10.1109/iitc.1999.787085
Publikováno v:
Japanese Journal of Applied Physics. 32:6119
A new plasma enhanced chemical vapor deposition (PECVD) oxide is proposed to form an anisotropic SiO2 film with ultra low sidewall step coverage for the intermetal dielectric (IMD) process. This oxide is named anisotropic plasma oxide (APO). In the A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d98d4e2df99fa021c2ef877cd1d6f015
https://doi.org/10.1143/jjap.32.6119
https://doi.org/10.1143/jjap.32.6119
Publikováno v:
Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat No99EX247); 1999, p83-85, 3p
Publikováno v:
Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat No99EX247); 1999, p209-211, 3p