Zobrazeno 1 - 10 of 31 pro vyhledávání: '"Lai-Guo Wang"'
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Akademický článek
Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
Autor: Wei Zhang, Ji-Zhou Kong, Zheng-Yi Cao, Ai-Dong Li, Lai-Guo Wang, Lin Zhu, Xin Li, Yan-Qiang Cao, Di Wu
Publikováno v: Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-11 (2017)
Abstract The HfO2/TiO2/HfO2 trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of the bottom electrodes of Pt a
Externí odkaz: https://doaj.org/article/dd9dcf15d5fb4525a6e51197079d98c9
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2
Artificial Synapses Based on Atomic/Molecular Layer Deposited Bilayer-Structured Memristive Thin Films
Autor: Lai-Guo Wang, Ai-Dong Li, Lin Zhu, Chang Liu
This chapter deals with several kinds of ultrathin bilayer-structured memristors, such as Pt/Al2O3/HfO2/TiN, Pt/HfO2/HfOx/TiN, Pt/TiO2/Ti-based maleic acid (Ti-MA)/TaN, among which the asymmetric memristive functional layers were designed and prepare
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a569b5b22f940f9f345998caaca9c077
https://doi.org/10.5772/intechopen.97753
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3
Growth Mechanism, Ambient Stability, and Charge Trapping Ability of Ti-Based Maleic Acid Hybrid Films by Molecular Layer Deposition
Autor: Lai-Guo Wang, Aidong Li, Yan-Qiang Cao, Lina Xu, Lin Zhu, Guoyong Fang, Di Wu, Wei Zhang, Chang Liu
Publikováno v: Langmuir. 35:3020-3030
Ti-based maleic acid (MA) hybrid films were successfully fabricated by molecular layer deposition (MLD) using organic precursor MA and inorganic precursor TiCl4. The effect of deposition temperature on the growth rate, composition, and bonding mode o
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35c6d0f999422dbc0074a9269cd19957
https://doi.org/10.1021/acs.langmuir.8b04137
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4
Impact of Metal Nanocrystal Size and Distribution on Resistive Switching Parameters of Oxide-Based Resistive Random Access Memories
Autor: Chang Liu, Kang Qin, Di Wu, Lai-Guo Wang, Aidong Li, Xuejin Zhang, Yan-Qiang Cao
Publikováno v: IEEE Transactions on Electron Devices. 65:4674-4678
The introduction of metal nanocrystals (NCs) has been confirmed to improve electrical uniformity of oxide-based resistive random access memory (RRAM) devices significantly; however, the current reports do not systematically elucidate the relationship
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::96f8b9bfce7caf099faef3a661ba7b27
https://doi.org/10.1109/ted.2018.2866168
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5
Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
Autor: Jizhou Kong, Di Wu, Wei Zhang, Zheng-Yi Cao, Yan-Qiang Cao, Lin Zhu, Xin Li, Lai-Guo Wang, Aidong Li
Publikováno v: Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-11 (2017)
The HfO2/TiO2/HfO2 trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of the bottom electrodes of Pt and TiN on
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42159f2537fe53f46427eed68cc62585
http://link.springer.com/article/10.1186/s11671-017-2164-z
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6
Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications
Autor: Zheng-Yi Cao, Di Wu, Aidong Li, Da-Peng Cui, Xu Qian, Lin Zhu, Lai-Guo Wang
Publikováno v: ACS Applied Materials & Interfaces. 9:6634-6643
Al2O3- or HfO2-based nanocomposite structures with embedded CoPtx nanocrystals (NCs) on TiN-coated Si substrates have been prepared by combination of thermal atomic layer deposition (ALD) and plasma-enhanced ALD for resistive random access memory (RR
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::555645c27e8c336a3a5d1b250c9c3892
https://doi.org/10.1021/acsami.6b16098
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7
Enhanced electrochemical performance of LiNi 0.5 Co 0.2 Mn 0.3 O 2 cathode material by ultrathin ZrO 2 coating
Autor: Shan-Shan Wang, Di Wu, Guoan Tai, Jizhou Kong, Aidong Li, Haifa Zhai, Hui Li, Lin Zhu, Lai-Guo Wang
Publikováno v: Journal of Alloys and Compounds. 657:593-600
Ultrathin ZrO2 coatings are successfully adopted to modify the surface of the layered LiNi0.5Co0.2Mn0.3O2 cathode material via atomic layer deposition (ALD) technology. Compared with the bare LiNi0.5Co0.2Mn0.3O2, the ultrathin ZrO2-coated cathode mat
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4592987eae1ff6443a018abd4aef9f88
https://doi.org/10.1016/j.jallcom.2015.10.187
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10
The Density Functional Study of Electronic Properties for Bismuth Aluminate
Autor: Rui Fang, Lai Guo Wang, Limin Dong, Zhi Dong Han, Lian Wei Shan, Wei Li, Bo Liu
Publikováno v: Advanced Materials Research. 873:877-882
In this paper, the density functional theory calculations on the electronic structure of BiAlO3 by using ultrasoft pseudopotential plane wave method are carried out. The results show that cubic and trigonal BiAlO3 are indirect band gap semiconductor.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c7634fe85108aa0c59ad77d19930a2d4
https://doi.org/10.4028/www.scientific.net/amr.873.877
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