Zobrazeno 1 - 10
of 84
pro vyhledávání: '"Lai, Zongsheng"'
Publikováno v:
In Sensors & Actuators: A. Physical 2007 134(2):532-537
Autor:
Yu, Jianguo, Xing, Huaizhong, Zhao, Qiang, Mao, Huibing, Shen, Ye, Wang, Jiqing, Lai, Zongsheng, Zhu, Ziqiang
Publikováno v:
In Solid State Communications 2006 138(10):502-504
Publikováno v:
AEU - International Journal of Electronics and Communications. 66:157-161
A two-stage monolithic ultra-wide-band (UWB) low-noise-amplifier (LNA) designed for MB-OFDM in 0.18 μm SiGe BiCMOS process is presented. With an optimized configuration combining advantages of RES-feedback and LC-ladder matching structure, the adjus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c6401a5372c9be98459607d412dcf8c
https://doi.org/10.1016/j.aeue.2011.06.004
https://doi.org/10.1016/j.aeue.2011.06.004
Autor:
Zhao Yuhang, Chen Shoumian, Ren Zheng, Shi Yanling, Hu Shaojian, Lai Zongsheng, Ding Yanfang, Xu Jiayi
Publikováno v:
IEEE Transactions on Power Electronics. 23:1027-1030
This letter presents a scalable macromodel dedicated to the I-V characteristics of the high-voltage double diffused drain metal oxide semiconductor field effect transistor (MOSFET), which can be widely used in SPICE simulators and electronic design a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed27dacf2eea1f0be21f41c8cec33420
https://doi.org/10.1109/tpel.2008.918358
https://doi.org/10.1109/tpel.2008.918358
Publikováno v:
Informacije MIDEM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3825::3ddddfc185d1b5c81634dcfda2f3a8a5
http://www.dlib.si/details/URN:NBN:SI:doc-5TJ9AWXR
http://www.dlib.si/details/URN:NBN:SI:doc-5TJ9AWXR
Autor:
Hua Lin, Zhang Shulin, Chen Lei, Liu Shengfu, Ruan Ying, Yan Qiong, Su Jie, Lai Zongsheng, Zhang Wei
Publikováno v:
2011 Asia Pacific Conference on Postgraduate Research in Microelectronics & Electronics.
This paper discusses a 5.5GHz fully integrated high-linearity Class A power amplifier based on 0.18μm SiGe BiCMOS technology. According to the post simulation results, the maximum output power can reach 24.18 dBm, and the PAE is 17.42% at P 1dB . Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5acc850f74acc3a4cd5713babb5e66ef
https://doi.org/10.1109/primeasia.2011.6075075
https://doi.org/10.1109/primeasia.2011.6075075
Publikováno v:
Sensors and Actuators A: Physical. 35:213-216
A new JFET magnetic-field sensor capable of detecting three components of the magnetic vector is presented. The device has been designed and fabricated with vertical integrated PNP (VIP) technology. The sensor shows relative sensitivities of S rx = 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb3bb24931fb4593956b8149d0b2d465
https://doi.org/10.1016/0924-4247(93)80155-a
https://doi.org/10.1016/0924-4247(93)80155-a
Publikováno v:
2010 Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia).
This paper presents a 2.4GHz monolithic Class E power amplifier based on Grace 0.18um SiGe BiCMOS technology. It has a two-stage structure and adopts small DC feed inductors and on-chip matching networks. Without any off-chip components, the power am
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::273051e353ccec08d9650bec4b7419c8
https://doi.org/10.1109/primeasia.2010.5604908
https://doi.org/10.1109/primeasia.2010.5604908
Publikováno v:
2010 Second International Conference on Networks Security, Wireless Communications and Trusted Computing.
Due to their manufacture technical or work environment, some nodes in wireless sensor networks (WSNs) routing may reveal misbehaviors which may get the performance of the WSNs dropped. For these misbehaviors are not borne by hackers, in similar cases
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7898e7b3f77e340e4d601d1b5d92897e
https://doi.org/10.1109/nswctc.2010.255
https://doi.org/10.1109/nswctc.2010.255
Publikováno v:
2009 IEEE 8th International Conference on ASIC.
This paper describes a four gain paths parallel-amplification parallel-summation logarithmic amplifier (PPLA). It is used in the UHF RFID Reader as a part of the ASK demodulating system to compress the high dynamic range input signal. Compared with t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28597acba726de495890fadc9fa348a6
https://doi.org/10.1109/asicon.2009.5351373
https://doi.org/10.1109/asicon.2009.5351373