Zobrazeno 1 - 10
of 477
pro vyhledávání: '"Lai, Chih Huang"'
Autor:
Yang, Chao-Yao, Chen, Sheng-Huai, Tseng, Chih-Hsiang, Kuo, Chang-Yang, Lin, Hsiu-Hau, Lai, Chih-Huang
Antiferromagnets (AFMs) exhibit spin arrangements with no net magnetization, positioning them as promising candidates for spintronics applications. While electrical manipulation of the single-crystal AFMs, composed of periodic spin configurations, is
Externí odkaz:
http://arxiv.org/abs/2310.11839
Publikováno v:
In Colloids and Surfaces A: Physicochemical and Engineering Aspects 20 February 2024 683
Autor:
Lin, Po-Hung, Lee, Po-Wei, Lin, Yu-Hsuan, Yang, Bo-Yuan, Kumar, Vinod, Lin, Hsiu-Hau, Lai, Chih-Huang
Spin Hall effect plays an essential role in generating spin current from the injected charge current, following the Dyakonov-Perel rule that the directions of charge flow, spin flow and spin polarization are mutually perpendicular to each other. Rece
Externí odkaz:
http://arxiv.org/abs/1911.01785
Publikováno v:
In Separation and Purification Technology 1 April 2023 310
Akademický článek
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Publikováno v:
In Journal of Magnetism and Magnetic Materials 1 December 2022 563
With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when scaling down the
Externí odkaz:
http://arxiv.org/abs/1706.01639
Autor:
Liu, Heng-Jui, Ye, Mao, Yang, Chao-Yao, Fang, Yue-Wen, Chin, Yi-Ying, Chen, Chun-Ying, Hung, Ruei Tze, Zhu, Yuanmin, He, Liang-Ching, Huang, Min-Yuan, Chen, Lang, Gu, Meng, Ke, Shanming, Liao, Yen-Fa, Tsuei, Ku-Ding, Lin, Hong-Ji, Chen, Chien-Te, Agrestini, Stefano, Herrero-Martin, Javier, Lai, Chih-Huang
Publikováno v:
In Applied Materials Today September 2021 24
Autor:
Gilbert, Dustin A., Liao, Jung-Wei, Kirby, Brian J., Winklhofer, Michael, Lai, Chih-Huang, Liu, Kai
Publikováno v:
Scientific Reports 6, 32842 (2016)
Assessing and controlling magnetic interactions in magnetic nanostructures are critical to nanomagnetic and spintronic explorations, such as magnetic recording media, permanent magnets, magnetic memory and logic devices, etc. Here we demonstrate an e
Externí odkaz:
http://arxiv.org/abs/1608.04630
Publikováno v:
Scientific Reports, Vol.5, 18026 (2015)
The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with e
Externí odkaz:
http://arxiv.org/abs/1603.07447