Zobrazeno 1 - 10
of 224
pro vyhledávání: '"Laha, Apurba"'
Autor:
Barik, Bikash C., Chakraborti, Himadri, Pal, Buddhadeb, Jain, Aditya K., Bhunia, Swagata, Samanta, Sounak, Laha, Apurba, Mahapatra, Suddhasatta, Gupta, K. Das
In this work, we demonstrate that the modulation of carrier density can alter the superconducting transition temperature by up to $204$ mK in epitaxial Indium Nitride on Gallium Nitride, accounting for the $10$% of the transition temperature in ungat
Externí odkaz:
http://arxiv.org/abs/2406.09607
Autor:
Pudi, Seshasainadh, Bhardwaj, Navneet, Sarkar, Ritam, Bellamkonda, V S Santhosh N Varma, Singh, Umang, Jain, Anshul, Bhunia, Swagata, Chatterjee, Soumyadip, Laha, Apurba
In this study, a 6 nm layer of Magnesium Silicate (Mg-Silicate) was deposited on AlGaN/GaN heterostructure by sputtering of multiple stacks of MgO and SiO$_{2}$, followed by rapid thermal annealing in a nitrogen (N$_{2}$) environment. The X-ray photo
Externí odkaz:
http://arxiv.org/abs/2308.08515
This work describes the fabrication and characterization of an Au/ZnO/Pt-based high-overtone bulk acoustic resonator (HBAR) on SiC substrates. We evaluate its microwave characteristics comparing with Si substrates for micro-electromechanical applicat
Externí odkaz:
http://arxiv.org/abs/2304.04286
Autor:
Bhunia, Swagata, Sarkar, Ritam, Nag, Dhiman, Jana, Dipankar, Mahapatra, Suddhasatta, Laha, Apurba
The nanowire-supported quantum dot (NWQD) of GaN is an unconventional nanostructure, which is extremely promising for realization of UV photonics in general, and room-temperature single photon generation, in particular. While GaN-NWQDs have several p
Externí odkaz:
http://arxiv.org/abs/2208.08724
Autor:
Patil, Shubham, Pandey, Adityanarayan H, Bhunia, Swagata, Lashkare, Sandip, Laha, Apurba, Deshpande, Veeresh, Ganguly, Udayan
Publikováno v:
In Thin Solid Films 15 October 2024 806
Autor:
Chatterjee, Soumyadip, Sarkar, Ritam, Bhunia, Swagata, Gayakwad, Dhammapriy, Saha, Dipankar, Laha, Apurba
Publikováno v:
In Materials Science in Semiconductor Processing September 2024 180
Autor:
Patil, Shubham, Kumar, Sandeep, Pandey, Adityanarayan H, Bhunia, Swagata, Kamaliya, Bhaveshkumar, Sharma, Anand, Lashkare, Sandip, Mote, Rakesh G., Laha, Apurba, Deshpande, Veeresh, Ganguly, Udayan
Publikováno v:
In Thin Solid Films 30 March 2024 793
Akademický článek
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Autor:
Patil, Shubham, Kumar, Sandeep, Kamaliya, Bhaveshkumar, Pandey, Adityanarayan H, Mote, Rakesh G., Laha, Apurba, Ganguly, Udayan
Publikováno v:
In Thin Solid Films 1 August 2023 778
Autor:
Bhunia, Swagata, Sarkar, Ritam, Nag, Dhiman, Ghosh, Kankat, Khiangte, Krista R, Mahapatra, Suddhasatta, Laha, Apurba
The rapidly increasing interest in nanowires (NWs) of GaN and associated III-Nitrides for (opto-)electronic applications demands immediate addressal of the technological challenges associated with both NW-growth and device processing. Towards this en
Externí odkaz:
http://arxiv.org/abs/1812.02443