Zobrazeno 1 - 10
of 81
pro vyhledávání: '"Lagadas, M"'
Autor:
Neyret, E. *, Di Cioccio, L., Bluet, J.M., Pernot, J., Vicente, P., Anglos, D., Lagadas, M., Billon, T.
Publikováno v:
In Materials Science & Engineering B 2001 80(1):332-336
Publikováno v:
In Materials Science & Engineering B 2001 80(1):257-261
Publikováno v:
In Materials Science & Engineering B 2001 80(1):164-167
Publikováno v:
In Materials Science & Engineering B 1999 66(1):141-145
Publikováno v:
In Materials Science & Engineering B 1999 66(1):92-96
Publikováno v:
Journal of Applied Physics; 10/15/1996, Vol. 80 Issue 8, p4377, 7p, 1 Diagram, 1 Chart, 4 Graphs
We investigated the dependence of Arsenic antisite defect concentration and that of epitaxial thickness (tepi), above which a transition to three dimensional growth appears, on the growth conditions of LTGaAs layers grown by MBE. The antisite defect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::043a3b3e85d6f64ac57dabed853032a7
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3013366
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3013366
The lattice mismatch of as-grown and annealed Low Temperature (LT) AlxGa1-xAs layers, epitaxially grown by Molecular Beam Epitaxy on (001) S.I. GaAs substrates, has been investigated as a function of growth conditions. The variation of electrical con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::c6ac0a105251790b314d015691d0afa3
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3013368
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3013368
The structural properties of GaAs grown by molecular-beam epitaxy at low temperatures have been investigated by scanning electron microscopy, transmission electron microscopy, and high-resolution x-ray double-crystal rocking curves as a function of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::89bf2890a3632efe0787dccceaf69a00
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3048640
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3048640
High resolution X-ray diffraction and Raman spectroscopy have been used to study GaAs epilayers grown on GaAs substrates by conventional molecular beam epitaxy and by atomic layer epitaxy, at growth temperatures ranging between 600 and 200°C. No sca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::1e88805f52e6a758a3eb7ec96cebfaa9
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3013856
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3013856