Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Lafi M. Alanazi"'
Autor:
Mohd Sharizal Alias, Bilal Janjua, Chao Zhao, Davide Priante, Abdullah A. Alhamoud, Malleswararao Tangi, Lafi M. Alanazi, Abdullah A. Alatawi, Abdulrahman M. Albadri, Ahmed Y. Alyamani, Tien Khee Ng, Boon S. Ooi
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 5, Pp 1-8 (2017)
The performance and efficiency of AlGaN ultraviolet light-emitting diodes have been limited by the extremely low light-extraction efficiency (LEE) due to the intrinsic material properties of AlGaN. Here, to enhance the LEE of the device, we demonstra
Externí odkaz:
https://doaj.org/article/fd7145b3446542e8976fb1252633394f
Autor:
Bilal Janjua, Tien Khee Ng, Mohd Sharizal Alias, Boon S. Ooi, Chao Zhao, Abdulrahman M. Albadri, Abdullah A. Alhamoud, Davide Priante, Aditya Prabaswara, Lafi M. Alanazi, Ahmed Y. Alyamani
Publikováno v:
IEEE Photonics Journal, Vol 10, Iss 2, Pp 1-11 (2018)
Group-III nitride-based ultraviolet (UV) quantum-disks (Qdisks) nanowires (NWs) light-emitting diodes grown on silicon substrates offer a scalable, environment-friendly, compact, and low-cost solution for numerous applications in solid-state lighting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61c060ca0a49075355f2878b5ba3df4b
https://doi.org/10.1109/jphot.2018.2814482
https://doi.org/10.1109/jphot.2018.2814482
Autor:
Abdullah A. Alatawi, Abdulrahman M. Albadri, Mohd Sharizal Alias, Boon S. Ooi, Malleswararao Tangi, Chao Zhao, Davide Priante, Lafi M. Alanazi, Ahmed Y. Alyamani, Bilal Janjua, Tien Khee Ng, Abdullah A. Alhamoud
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 5, Pp 1-8 (2017)
The performance and efficiency of AlGaN ultraviolet light-emitting diodes have been limited by the extremely low light-extraction efficiency (LEE) due to the intrinsic material properties of AlGaN. Here, to enhance the LEE of the device, we demonstra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b46b8dba66c6fec899321ba90917ac81
https://doi.org/10.1109/jphot.2017.2749198
https://doi.org/10.1109/jphot.2017.2749198
Autor:
Lafi M. Alanazi, E. V. Lutsenko, M. V. Rzheutski, M. S. Leanenia, Maher Aljohani, Abdulaziz Aljariwi, Ahmed Y. Alyamani, G. P. Yablonskii
Publikováno v:
SPIE Proceedings.
Room temperature random lasing with white light emission in a mixture of AIIBVI semiconductor powders was achieved for the first time. The scattering gain media was formed by the mixture of closely packed active micron sized crystallites of ZnSe, CdS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ab3275c0e3a3cc70e8e931200d7d138
https://doi.org/10.1117/12.2212439
https://doi.org/10.1117/12.2212439