Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Ladislav Harmatha"'
Autor:
Miroslav Mikolasek, Peter Ondrejka, Filip Chymo, Patrik Novak, Ladislav Harmatha, Vlastimil Rehacek, Ivan Hotovy
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 16, Iss 3, Pp 367-373 (2018)
Potentiostatic electrodeposition conducted at various deposition voltages from lactate-stabilized copper sulfate electrolyte was used for preparation of Cu2O layers for Photoelectrochemical (PEC) production of hydrogen. A novel approach based on an a
Externí odkaz:
https://doaj.org/article/eb191ffe5d0d471f8c1463ce50242241
Autor:
Arpad Kosa, Lubica Stuchlikova, Ladislav Harmatha, Jaroslav Kovac, Beata Sciana, Wojciech Dawidowski, Marek Tlaczala
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 15, Iss 1, Pp 114-119 (2017)
This paper discusses results of electrically active defect states - deep energy level analysis in InGaAs and GaAsN undoped semiconductor structures grown for solar cell applications. Main attention is focused on composition and growth condition depen
Externí odkaz:
https://doaj.org/article/1746e21a614e47c39cf9bf9180bcfa20
Autor:
Peter Juhasz, Juraj Nevrela, Michal Micjan, Miroslav Novota, Jan Uhrik, Lubica Stuchlikova, Jan Jakabovic, Ladislav Harmatha, Martin Weis
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 7, Iss 1, Pp 47-52 (2016)
The charge behavior of organic light emitting diode (OLED) is investigated by steady-state current–voltage technique and impedance spectroscopy at various temperatures to obtain activation energies of charge injection and transport processes. Good
Externí odkaz:
https://doaj.org/article/98849446d02a45aca19e3c5884b6adc5
Autor:
Jakub Rybar, Lubica Stuchlikova, Ladislav Harmatha, Juraj Jakus, Jaroslav Kovac, Beata Sciana, Damian Radziewicz, Damian Pucicki, Wojciech Dawidowski, Marek Tlaczala
Publikováno v:
Communications, Vol 16, Iss 1, Pp 10-14 (2014)
The paper presents an in-depth DLTS characterization of the p-i-n structure based on the InGaAsN/GaAs triple quantum well. Three DLTS evaluation methods were used for evaluation of the measured DLTS spectra. The results of all evaluation methods are
Externí odkaz:
https://doaj.org/article/83e2a225f8914fdcb46cd7cf8f0fd396
Publikováno v:
Communications, Vol 12, Iss 2, Pp 5-9 (2010)
The article treats the methodology of measuring the breakdown voltage on Si-based MOS structures. Identification of defects in the thin gate oxide is performed using the Weibull statistical analysis. By comparing the current and capacitance measureme
Externí odkaz:
https://doaj.org/article/934494b011544d4f9e1d97dd923306f1
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 7, Iss 1 - 2, Pp 385-388 (2008)
The contribution presents the results of simulation of direct tunnelling of free charge carriers through a thin gateinsulator in MOS structures consisting of a Ta2O5/SiO2 bilayer taking into account also indirect tunnelling of free chargecarriers thr
Externí odkaz:
https://doaj.org/article/d320fc7fb5d5450b998d4338caa761b8
Publikováno v:
Communications, Vol 8, Iss 1, Pp 25-28 (2006)
MOS structures exposed to 305 MeV Kr and 710 MeV Bi ions irradiation with fluences of 109 cm2 and 1010 cm2 were investigated by capacitance measuring methods (C-V, C-t), completed by quasistatic low-frequency C-V and DLTS measurements.The irradiated
Externí odkaz:
https://doaj.org/article/5ff8c730a0e54fd2acdeb159b345e85c
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 3, Iss 2, Pp 265-268 (2004)
High quality silicon epitaxial layers are inevitable in bipolar and/or unipolar technology. However, its properties are not as easy characterized as those of bulk material. The recombination lifetime is dominated by surface/interface recombination fo
Externí odkaz:
https://doaj.org/article/358d28fe8862451bac6f68c3af4fdde7
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 3, Iss 2, Pp 269-272 (2004)
The formation and annealing of radiation-induced defects in MOS structures exposed to 710 MeV Bi ions and 305 MeV Kr ions radiation with a fluency of 10^9 and 10^10cm^2 have been studied by capacitance methods. Electrical activity of the defects has
Externí odkaz:
https://doaj.org/article/bfb96ccf49ac472c91c7709cfb9ec855
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 5, Iss 1, Pp 334-336 (2006)
The article presents the results of capacitance measurements on MOS structures with a silicon substrate that wasdoped by nitrogen during the growth of the single crystal by Czochralski’s method. Attention is paid to the energydistribution of the tr
Externí odkaz:
https://doaj.org/article/7d8c46618c85487f989907aff5f763b5