Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Lachlan A. Smillie"'
Autor:
Tuan T. Tran, Jennifer Wong-Leung, Lachlan A. Smillie, Anders Hallén, Maria G. Grimaldi, Jim S. Williams
Publikováno v:
APL Materials, Vol 11, Iss 4, Pp 041115-041115-7 (2023)
Covalent amorphous semiconductors, such as amorphous silicon (a-Si) and germanium (a-Ge), are commonly believed to have localized electronic states at the top of the valence band and the bottom of the conduction band. Electrical conductivity is thoug
Externí odkaz:
https://doaj.org/article/e9406f6c3aea454bbbe93b91074742fe
Autor:
Hemi H. Gandhi, David Pastor, Tuan T. Tran, Stefan Kalchmair, Lachlan A. Smillie, Jonathan P. Mailoa, Ruggero Milazzo, Enrico Napolitani, Marko Loncar, James S. Williams, Michael J. Aziz, Eric Mazur
Publikováno v:
AIP Advances, Vol 10, Iss 7, Pp 075028-075028-6 (2020)
Obtaining short-wavelength-infrared (SWIR; 1.4 μm–3.0 μm) room-temperature photodetection in a low-cost, group IV semiconductor is desirable for numerous applications. We demonstrate a non-equilibrium method for hyperdoping germanium with seleniu
Externí odkaz:
https://doaj.org/article/fa3be7a8a9254ba99d46f6ff635d8021
Autor:
Jodie Bradby, Bianca Haberl, Lachlan A. Smillie, James Williams, Chris J. Pickard, Ludovic Rapp, Andrei Rode, M. Niihori
Publikováno v:
Physical Review Materials. 4
Confined microexplosions induced in silicon by powerful ultrashort laser pulses can lead to new Si phases. Some of these have not previously been observed via near-equilibrium compression of silicon. In this study, confocal Raman micro-spectroscopy a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac2d9a694e5a696c56d7e3afb18a9396
https://doi.org/10.1103/physrevmaterials.4.093803
https://doi.org/10.1103/physrevmaterials.4.093803
Autor:
R. Milazzo, Eric Mazur, Michael J. Aziz, Tuan T. Tran, Lachlan A. Smillie, Jonathan P. Mailoa, James Williams, S. Kalchmair, Hemi H. Gandhi, Enrico Napolitani, Marko Loncar, David Pastor
Publikováno v:
AIP Advances, Vol 10, Iss 7, Pp 075028-075028-6 (2020)
Obtaining short-wavelength-infrared (SWIR; 1.4 mu m-3.0 mu m) room-temperature photodetection in a low-cost, group IV semiconductor is desirable for numerous applications. We demonstrate a non-equilibrium method for hyperdoping germanium with seleniu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5590a4fcd2a32dae12e570142c819dd8
http://hdl.handle.net/11577/3349927
http://hdl.handle.net/11577/3349927
Autor:
Quentin Hudspeth, James Williams, Tuan T. Tran, Lachlan A. Smillie, Yining Liu, Buguo Wang, Renaud A. Bruce, Jeffrey M. Warrender, Jay Mathews
Direct-bandgap germanium-tin (Ge-Sn) alloys are highly sought-after materials for applications in silicon photonic integrated circuits. Other than crystal quality, two main factors determine the transition from the indirect to direct bandgap: the hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75d618216de741df280d1e02f27ff7cc
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-418790
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-418790
Autor:
Lachlan A. Smillie, Tuan T. Tran, Jay Mathews, Quentin Hudspeth, James Williams, Renaud A. Bruce, Buguo Wang, Yining Liu, Jeffrey Warrender
Publikováno v:
2019 IEEE Photonics Society Summer Topical Meeting Series (SUM).
Room temperature photoluminescence (PL) was observed from GeSn layers fabricated by ion implantation of Sn into bulk Ge followed by pulsed laser melting using an Nd:YAG laser at 355 nm. PL measurements indicate regions of high-crystalline quality wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::152ab7c6705047e566ac3b0cc08eb5bc
https://doi.org/10.1109/phosst.2019.8794879
https://doi.org/10.1109/phosst.2019.8794879
Autor:
Lachlan A. Smillie, Jodie Bradby, Peter Verburg, A.J. Huis in 't Veld, Gerardus Richardus, Bernardus, Engelina Römer, Bianca Haberl, James Williams
Publikováno v:
Applied physics A: Materials science and processing, 120(2), 683-691. Springer
Laser-induced subsurface modification of dielectric materials is a well-known technology. Applications include the production of optical components and selective etching. In addition to dielectric materials, the subsurface modification technology can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61e6ac52fb05cef97c8786971852f1ea
https://doi.org/10.1007/s00339-015-9238-5
https://doi.org/10.1007/s00339-015-9238-5
Autor:
Lachlan A. Smillie, Kiyonori Suzuki, Xiaodong Wu, Akira Kato, Akira Manabe, Vanalysa Ly, Tomoyuki Shoji
Publikováno v:
Journal of Alloys and Compounds. 615:S285-S290
The low-temperature phase (LTP) MnBi is one of the few rare-earth free compounds that exhibit a large magnetocrystalline anisotropy energy in the order of 10 6 J/m 3 . A large coercive field ( μ 0 H cj ) above 1 T can be obtained readily by reducing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f03ba5867ceca2e2ed5bf91b7bb2f728
https://doi.org/10.1016/j.jallcom.2014.01.120
https://doi.org/10.1016/j.jallcom.2014.01.120
Autor:
James Williams, Lachlan A. Smillie, Michael J. Aziz, Tuan T. Tran, Austin Akey, Hemi H. Gandhi, David Pastor
Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27faf23bc3b44e675b1a029c2e64576f
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-351516
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-351516
Autor:
Tuan T. Tran, Bianca Haberl, Jodie Bradby, Lachlan A. Smillie, James Williams, Mangalampalli S. R. N. Kiran, D. Subianto
This study uses high-temperature nanoindentation coupled with in situ electrical measurements to investigate the temperature dependence (25–200 °C) of the phase transformation behavior of diamond cubic (dc) silicon at the nanoscale. Along with in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::944c33cbd38aecfdfa04cc4278976dcd
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-351514
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-351514