Zobrazeno 1 - 2
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pro vyhledávání: '"Laakso, S. J."'
Publikováno v:
Appl. Phys. Lett. 93, 112113 (2008)
We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage window. When th
Externí odkaz:
http://arxiv.org/abs/0808.2914
Publikováno v:
Journal of Physics: Conference Series; 12/29/2014, Vol. 557 Issue 1, p1-1, 1p