Výsledky vyhledávání - "LaBella, V. P."

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Reflection high-energy electron diffraction and scanning tunneling microscopy study of InP(001) surface reconstructions

Autor: LaBella, V. P., Ding, Z., Bullock, D. W., Emery, C., Thibado, P. M.

Publikováno v: Journal of Vacuum Science and Technology A 18(4), 1492-1496 (2000)

The reconstructions of the InP(001) surface prepared by molecular beam epitaxy have been studied with in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The growth chamber contains a highly accurate t

Externí odkaz: http://arxiv.org/abs/1503.04163

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Time-evolution of the GaAs(0 0 1) pre-roughening process

Autor: Ding, Z., Bullock, D. W., Thibado, P. M., LaBella, V. P., Mullen, K.

Publikováno v: Surface Science 540, 491-496 (2003)

The GaAs(0 0 1) surface is observed to evolve from being perfectly flat to a surface half covered with one-monolayer high spontaneously formed GaAs islands. The dynamics of this process are monitored with atomic-scale resolution using scanning tunnel

Externí odkaz: http://arxiv.org/abs/1503.03809

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Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001)

Autor: Ding, Z., Thibado, P. M., Awo-Affouda, C., LaBella, V. P.

Publikováno v: Journal of Vacuum Science and Technology B 22(4), 2068-2072 (2004)

We have deposited Co films on the GaAs(001) surface by using an e-beam evaporation method. The thicknesses of the Co films are measured by using x-ray reflectivity and Rutherford backscattering. The magnetic properties of the films have been measured

Externí odkaz: http://arxiv.org/abs/1503.03458

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Atmospheric oxygen in Mn doped GaAs/GaAs(0 0 1) thin films grown by molecular beam epitaxy

Autor: Xu, J. F., Thibado, P. M., Awo-Affouda, C., Moore, R., LaBella, V. P.

Publikováno v: Journal of Crystal Growth 301-302, 54-57 (2007)

Mn doped GaAs thin films were grown using molecular beam epitaxy at high and low substrate temperatures. The elemental concentration depth profiles in the thin films were determined by using Auger electron spectroscopy combined with ion etching. The

Externí odkaz: http://arxiv.org/abs/1502.07215

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Anomalous Mn depth profiles for GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy

Autor: Xu, J. F., Thibado, P. M., Awo-Affouda, C., Ramos, F., LaBella, V. P.

Publikováno v: Journal of Vacuum Science and Technology B 25(4), 1476-1480 (2007)

Mn concentration depth profiles in Mn-doped GaAs thin films grown at substrate temperatures of 580 and 250 {\deg}C using various Mn cell temperatures have been investigated with dynamic secondary ion mass spectrometry and Auger electron spectroscopy.

Externí odkaz: http://arxiv.org/abs/1502.06879

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Schottky barrier and attenuation length for hot hole injection in non-epitaxial Au on p-type GaAs

Autor: Sitnitsky, I., Garramone, J. J., Abel, J. R., Xu, P., Barber, S. D., Ackerman, M. L., Schoelz, J. K., Thibado, P. M., LaBella, V. P.

Publikováno v: Journal of Vacuum Science and Technology B 30, 04E110 (2012)

Ballistic electron emission microscopy (BEEM) was performed to obtain nanoscale current versus bias characteristics of non-epitaxial Au on p-type GaAs in order to accurately measure the local Schottky barrier height. Hole injection BEEM data was aver

Externí odkaz: http://arxiv.org/abs/1502.01010

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