Zobrazeno 1 - 10
of 96
pro vyhledávání: '"La Fontaine, Bruno"'
Autor:
Guerrero, Douglas, Amblard, Gilles R., Dinh, Cong Que, Nagahara, Seiji, Cho, Kayoko, Tomori, Hikari, Kuwahara, Yuhei, Onitsuka, Tomoya, Okada, Soichiro, Kawakami, Shinichiro, Hara, Arisa, Fujimoto, Seiji, Muramatsu, Makoto, Tsuzuki, Reiko, Liu, Xiang, Thiam, Arame, Feurprier, Yannick, Nafus, Kathleen, Carcasi, Michael, Huli, Lior, Kato, Kanzo, Krawicz, Alexandra, Kocsis, Michael, De Schepper, Peter, McQuade, Lauren, Kasahara, Kazuki, Garcia Santaclara, Jara, Hoefnagels, Rik, La Fontaine, Bruno, Miyakawa, Ryan, Anderson, Chris, Naulleau, Patrick
Publikováno v:
Proceedings of SPIE; April 2024, Vol. 12957 Issue: 1 p1295705-1295705-12
Autor:
La Fontaine, Bruno, Comtois, Daniel
Publikováno v:
Journal of Applied Physics; 7/15/2000, Vol. 88 Issue 2, p610, 6p, 2 Black and White Photographs, 1 Diagram, 6 Graphs
Autor:
Louis, Eric, van Hattum, E.D., Alonso van der Westen, S., Sallé, P., Grootkarzijn, Kees, Zoethout, E., Bijkerk, Frederik, von Blanckenhagen, G., Müllender, Stephan, La Fontaine, Bruno M.
Publikováno v:
Extreme Ultraviolet (EUV) Lithography, 7636
Reported is a summary of multilayer deposition results by FOM on three elements of the projection optics of the ASML Extreme UV Lithography HVM tools. The coating process used is e-beam evaporation in combination with low-energy ion-beam smoothening.
Autor:
van den Boogaard, Toine, Louis, Eric, Goldberg, K.A., Mochi, I., Bijkerk, Frederik, La Fontaine, Bruno M.
Publikováno v:
Extreme Ultraviolet (EUV) Lithography: 22–25 February 2010, San Jose, California, United States
Extreme Ultraviolet (EUV) Lithography
Extreme Ultraviolet (EUV) Lithography
In this study, multilayer morphology near the key anomalies in grating-like structures, namely sharp step-edges and steep walls, are examined. Different deposition schemes are employed. Based on cross section TEM analysis an explanatory model describ
Autor:
Tsarfati, T., Zoethout, E., Louis, Eric, van de Kruijs, Robbert Wilhelmus Elisabeth, Yakshin, Andrey, Müllender, Stephan, Bijkerk, Frederik, Schellenberg, Frank M., La Fontaine, Bruno M.
Publikováno v:
Proceedings of SPIE, The International Society for Optical Engineering
We present a computational and experimental study on interface passivation of B4C/La multilayers for photolithography at wavelengths beyond 13.5 nm. We successfully applied N-plasma treatment to form interface-localized BN and LaN layers, preventing
Autor:
van den Boogaard, Toine, Louis, Eric, van Goor, F.A., Bijkerk, Frederik, Schellenberg, Frank M., La Fontaine, Bruno M.
Publikováno v:
Alternative Lithographic Technologies: 24–26 February 2009, San Jose, California, United States
Alternative Lithographic Technologies
Alternative Lithographic Technologies
Laser produced plasma (LLP) sources are generally considered attractive for high power EUV production in next generation lithography equipment. Such plasmas are most efficiently excited by the relatively long, infrared wavelengths of CO2-lasers, but
Autor:
Chen, Juequan, Louis, Eric, Bijkerk, Frederik, Lee, Christopher James, Wormeester, Herbert, Kunze, Reinhard, Schmidt, Hagen, Schneider, Dieter, Moors, Roel, van Schaik, Willem, Lubomska, Monika, Schellenberg, Frank M., La Fontaine, Bruno M.
Publikováno v:
Proceedings of SPIE, The International Society for Optical Engineering
Carbon contamination layers, deposited on extreme ultraviolet (EUV) multilayer mirrors during illumination were characterized ex situ using spectroscopic ellipsometry (SE), laser generated surface acoustic waves (LG-SAW), and by their EUV reflectance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43a87c90a21adfb48385699b82e41370
https://research.utwente.nl/en/publications/a341aeed-5dd1-4b3a-915d-2cd3f69572e2
https://research.utwente.nl/en/publications/a341aeed-5dd1-4b3a-915d-2cd3f69572e2
Autor:
Naulleau, Patrick, Rammeloo, Clemens, Cain, Jason P., Dean, Kim, Denham, Paul, Goldberg, Kenneth A., Hoef, Brian, La Fontaine, Bruno, Pawloski, Adam, Larson, Carl, Wallraff, Greg
Publikováno v:
Naulleau, Patrick; Rammeloo, Clemens; Cain, Jason P.; Dean, Kim; Denham, Paul; Goldberg, Kenneth A.; et al.(2005). Investigation of the current resolution limits of advanced EUV resists. Lawrence Berkeley National Laboratory. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/64c1062p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______325::bb3f0255441f24ea4c8bdc5bb6491674
http://www.escholarship.org/uc/item/64c1062p
http://www.escholarship.org/uc/item/64c1062p
Autor:
Fomenkov, Igor, Brandt, David, Ershov, Alex, Schafgans, Alexander, Yezheng Tao, Vaschenko, Georgiy, Rokitski, Slava, Kats, Michael, Vargas, Michael, Purvis, Michael, Rafac, Rob, La Fontaine, Bruno, De Dea, Silvia, LaForge, Andrew, Stewart, Jayson, Chang, Steven, Graham, Matthew, Riggs, Daniel, Taylor, Ted, Abraham, Mathew
Publikováno v:
Advanced Optical Technologies; Jun2017, Vol. 6 Issue 3/4, p173-186, 14p
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