Zobrazeno 1 - 10
of 32
pro vyhledávání: '"LYNN, SHANE"'
Autor:
Lynn, Shane
Publikováno v:
Irish Historical Studies, 2016 May 01. 40(157), 43-65.
Externí odkaz:
https://www.jstor.org/stable/26426026
Autor:
Lynn, Shane
Publikováno v:
The Steinbeck Review, 2015 Dec 01. 12(2), 149-158.
Autor:
Victorina Villanueva-Vunnasiri, Lynn Lynn Shane, Theresa Thaneetananont, Issorasak Santivitoonvongs
Publikováno v:
Suranaree Journal of Social Science. 17:1-14
This research aims to examine the relationship between accounting student-interns evaluation, their supervisor evaluation and student satisfaction toward internship, and employment intention. Questionnaires were used to collect data from 98 accountin
Publikováno v:
In Journal of Process Control April 2012 22(4):666-676
Publikováno v:
In IFAC Proceedings Volumes January 2011 44(1):12060-12065
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Plasma etch is a complex semiconductor manufacturing process in which material is removed from the surface of a silicon wafer using a gas in plasma form. As the process etch rate cannot be measured easily during or after processing, virtual metrology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______223::0a8fe25cc11d588016806bdbf80c4871
http://eprints.maynoothuniversity.ie/3617/
http://eprints.maynoothuniversity.ie/3617/
Plasma etch is a semiconductor manufacturing process during which material is removed from the surface of semiconducting wafers, typically made of silicon, using gases in plasma form. A host of chemical and electrical complexities make the etch proce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______223::88749f699bdcda76069c7ca7c3860503
http://eprints.maynoothuniversity.ie/3867/
http://eprints.maynoothuniversity.ie/3867/
Plasma etching is a semiconductor manufacturing process during which material is removed from the surface of silicon wafers using gases in plasma form. A host of chemical and electrical complexities make the etch process notoriously dicult to model a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______223::ff20e18bde955bc6636a06eba7d625af
http://eprints.maynoothuniversity.ie/3554/
http://eprints.maynoothuniversity.ie/3554/
Autor:
Lynn, Shane
Plasma processes can present dicult control challenges due to time-varying dynamics and a lack of relevant and/or regular measurements. Virtual metrology (VM) is the use of mathematical models with accessible measurements from an operating process to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______223::b0c0fadabe13c593349934d54fcdc989
http://eprints.maynoothuniversity.ie/2657/
http://eprints.maynoothuniversity.ie/2657/