Zobrazeno 1 - 10
of 3 530
pro vyhledávání: '"LUO Chao"'
Conventional silicon bipolars are not suitable for low-temperature operation due to the deterioration of current gain ($\beta$). In this paper, we characterize lateral bipolar junction transistors (LBJTs) fabricated on silicon-on-insulator (SOI) wafe
Externí odkaz:
http://arxiv.org/abs/2309.09257
Publikováno v:
Zhejiang dianli, Vol 43, Iss 10, Pp 27-34 (2024)
To address the issue of insufficient grid inertia support caused by the large-scale integration of renewable energy， a synchronous condenser model of a flywheel energy storage system， along with a control scheme， is developed based on permanent
Externí odkaz:
https://doaj.org/article/33830f6e36864fa5b30c9a410339509b
Publikováno v:
Journal of Intelligent Manufacturing and Special Equipment, 2024, Vol. 5, Issue 1, pp. 221-241.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/JIMSE-10-2023-0010
Publikováno v:
Fayixue Zazhi, Vol 40, Iss 4, Pp 359-364 (2024)
ObjectiveTo explore the causes of related medical damage risks and preventive measures by analyzing the identification results of medical damage in 20 urological death cases.MethodsA retrospective analysis was conducted on 20 death cases of medical d
Externí odkaz:
https://doaj.org/article/2f772f4f6dbe4ce5a5b2d6b86ae198ba
Publikováno v:
Journal of Applied Physics; 10/7/2024, Vol. 136 Issue 13, p1-10, 10p
Publikováno v:
Dizhi lixue xuebao, Vol 30, Iss 4, Pp 547-562 (2024)
Objective The Huayingshan fault zone, the largest fault zone within Sichuan Basin, exhibits notable differences in geological structures on both sides. Historically, earthquakes with a magnitude of ≤5 have occurred frequently along this fault zone,
Externí odkaz:
https://doaj.org/article/cf7881dad1674ca98fb903d84f09014d
Quantum computing (QC) requires cryogenic electronic circuits as control and readout sub-systems of quantum chips to meet the qubit scale-up challenges.At this temperature,MOSFETs transistors exhibition many changes such as higher threshold voltage,h
Externí odkaz:
http://arxiv.org/abs/2204.09393
Autor:
Zeng, Bolun, Zhang, Haochen, Xiang, Zikun, Luo, Chao, Zhang, Yuanke, Weng, Mingjie, Xue, Qiwen, Hu, Sirui, Sun, Yue, Yang, Lei, Sun, Haiding, Guo, Guoping
The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is systematically investigated by the direct current (DC) and low-frequency noise (LFN) characteristics within the temperature (T) range from 300 K to 4.2 K. The import
Externí odkaz:
http://arxiv.org/abs/2204.09216
Autor:
Yan, Dadong, Gan, Lei, Dong, Xianghong, Tie, Huaimao, Luo, Chao, Wang, Zhenlu, Jiang, Haibo, Chen, Jiangfeng, An, Miao, Qin, Chuanjie, Lu, Zhiyuan
Publikováno v:
In Fish and Shellfish Immunology November 2024 154
Autor:
Wu, Chia-Hung, Ling, Kan, Lin, Te-Ming, Luo, Chao-Bao, Lirng, Jiing-Feng, Huang, Shan-Su, Chang, Feng-Chi
Publikováno v:
In European Journal of Radiology November 2024 180