Zobrazeno 1 - 10
of 494
pro vyhledávání: '"LLOYD SPETZ, A."'
Autor:
Bunnfors, Kalle, Abrikossova, Natalia, Kilpijärvi, Joni, Eriksson, Peter, Juuti, Jari, Halonen, Niina, Brommesson, Caroline, Lloyd Spetz, Anita, Uvdal, Kajsa *
Publikováno v:
In Sensors and Actuators: B. Chemical 15 June 2020 313
Publikováno v:
In Surface Science February 2017 656:77-85
Autor:
Fashandi, Hossein, Soldemo, Markus, Weissenrieder, Jonas, Göthelid, Mats, Eriksson, Jens, Eklund, Per, Lloyd Spetz, Anita, Andersson, Mike
Publikováno v:
In Journal of Catalysis December 2016 344:583-590
Autor:
Bastuck, M., Puglisi, D., Huotari, J., Sauerwald, T., Lappalainen, J., Lloyd Spetz, A., Andersson, M., Schütze, A.
Publikováno v:
In Thin Solid Films 1 November 2016 618 Part B:263-270
Publikováno v:
In Sensors & Actuators: B. Chemical 1 October 2015 217:22-29
Autor:
Niina Halonen, Joni Kilpijärvi, Maciej Sobocinski, Timir Datta-Chaudhuri, Antti Hassinen, Someshekar B. Prakash, Peter Möller, Pamela Abshire, Sakari Kellokumpu, Anita Lloyd Spetz
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 7, Iss 1, Pp 1871-1877 (2016)
Cell viability monitoring is an important part of biosafety evaluation for the detection of toxic effects on cells caused by nanomaterials, preferably by label-free, noninvasive, fast, and cost effective methods. These requirements can be met by moni
Externí odkaz:
https://doaj.org/article/a565e71df26846ac800fc374942d7793
Autor:
Ivan Shtepliuk, Jens Eriksson, Volodymyr Khranovskyy, Tihomir Iakimov, Anita Lloyd Spetz, Rositsa Yakimova
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 7, Iss 1, Pp 1800-1814 (2016)
A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky jun
Externí odkaz:
https://doaj.org/article/f2c25e2d7d094f46958fda00e9a3e89e
Autor:
Bur, Christian, Bastuck, Manuel, Puglisi, Donatella, Schütze, Andreas, Lloyd Spetz, Anita, Andersson, Mike
Publikováno v:
In Sensors & Actuators: B. Chemical 31 July 2015 214:225-233
Autor:
Fashandi, H., Andersson, M., Eriksson, J., Lu, J., Smedfors, K., Zetterling, C.-M., Lloyd Spetz, A., Eklund, P.
Publikováno v:
In Scripta Materialia 1 April 2015 99:53-56
Publikováno v:
Proceedings, Vol 56, Iss 1, p 41 (2021)
In order to investigate the necessary device improvements for high-temperature CO sensing with SiC metal insulator semiconductor field effect transistor (MISFET)-based chemical gas sensors, devices employing, as the gas-sensitive gate contact, a film
Externí odkaz:
https://doaj.org/article/2b5194aa09db4351a2998dbb5a2954ee