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pro vyhledávání: '"LLEONART Jordi"'
SiO2 with the alpha-quartz structure is one of the most popular piezoelectrics. It is widely used in crystal oscillators, bulk acoustic wave (BAW) devices, surface acoustic wave (SAW) devices, and so on. GeO2 can also be crystallized into the alpha-q
Externí odkaz:
http://arxiv.org/abs/2109.12890
Publikováno v:
Sci Rep 11, 14888 (2021)
To obtain crystalline thin films of alpha-Quartz represents a challenge due to the tendency for the material towards spherulitic growth. Thus, understanding the mechanisms that give rise to spherulitic growth can help regulate the growth process. Her
Externí odkaz:
http://arxiv.org/abs/2105.01105
Publikováno v:
Condens. Matter 2021, 6, 7 (2021)
Memristive devices made of silicon compatible simple oxides are of great interest for storage and logic devices in future adaptable electronics and non-digital computing applications. A series of highly desirable properties observed in an atomic-laye
Externí odkaz:
http://arxiv.org/abs/2008.10711
Autor:
Zhou, Silang, Antoja-Lleonart, Jordi, Nukala, Pavan, Ocelik, Vaclav, Lutjes, Nick R., Noheda, Beatriz
Publikováno v:
Acta Materialia 215 (2021) 117069
Piezoelectric quartz SiO2 crystals are widely used in industry as oscillators. As a natural mineral, quartz and its relevant silicates are also of interest of geoscience and mineralogy. However, the nucleation and growth of quartz crystals is difficu
Externí odkaz:
http://arxiv.org/abs/2007.03916
Autor:
Nukala, Pavan, Wei, Yingfen, de Haas, Vincent, Guo, Qikai, Antoja-Lleonart, Jordi, Noheda, Beatriz
Publikováno v:
Ferroelectrics, 569:1, 148-163 (2020)
The unconventional Si-compatible ferroelectricity in hafnia-based systems, which becomes robust only at nanoscopic sizes, has attracted a lot of interest. While a metastable polar orthorhombic (o-) phase (Pca21) is widely regarded as the responsible
Externí odkaz:
http://arxiv.org/abs/2005.01809
Autor:
Antoja-Lleonart, Jordi, Zhou, Silang, de Hond, Kit, Koster, Gertjan, Rijnders, Guus, Noheda, Beatriz
Publikováno v:
Appl. Phys. Lett. 117, 041601 (2020)
Despite its interest for CMOS applications, Atomic Layer Deposition (ALD) of GeO$_{2}$ thin films, by itself or in combination with SiO$_{2}$, has not been widely investigated yet. Here we report the ALD growth of SiO$_{2}$/GeO$_{2}$ multilayers on S
Externí odkaz:
http://arxiv.org/abs/2004.02622
Autor:
Nukala, Pavan, Antoja-Lleonart, Jordi, Wei, Yingfen, Yedra, Lluis, Dkhil, Brahim, Noheda, Beatriz
Publikováno v:
ACS Applied Electronic Materials 1 (2019) 2585-2593
Ultra-thin Hf1-xZrxO2 films have attracted tremendous interest owing to their Si-compatible ferroelectricity arising from polar polymorphs. While these phases have been grown on Si as polycrystalline films, epitaxial growth was only achieved on non-S
Externí odkaz:
http://arxiv.org/abs/1907.06097
Autor:
Zhou, Silang, Antoja-Lleonart, Jordi, Nukala, Pavan, Ocelík, Václav, Lutjes, Nick R., Noheda, Beatriz
Publikováno v:
In Acta Materialia 15 August 2021 215
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Publikováno v:
In Regional Studies in Marine Science September 2019 31