Zobrazeno 1 - 10
of 3 024
pro vyhledávání: '"LEE, C J"'
Autor:
Higashitarumizu, N., Kawamoto, H., Lee, C. -J., Lin, B. -H., Chu, F. -H., Yonemori, I., Nishimura, T. i, Wakabayashi, K., Chang, W. -H., Nagashio, K.
Publikováno v:
Nature commun.,2020, 11, 2428
2D van der Waals ferroelectric semiconductors have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several accomplishments have been reported in ferroelectric resistive switchi
Externí odkaz:
http://arxiv.org/abs/2006.10441
Publikováno v:
IOP Conference Series: Materials Science & Engineering; 2024, Vol. 1318 Issue 1, p1-8, 8p
Publikováno v:
J. Appl. Phys. 120, 235304 (2016)
We introduce a model for hydrogen induced blister formation in nanometer thick thin films. The model assumes that molecular hydrogen gets trapped under a circular blister cap causing it to deflect elastically outward until a stable blister is formed.
Externí odkaz:
http://arxiv.org/abs/1609.01092
Autor:
Astakhov, D. I., Goedheer, W. J., Lee, C. J., Ivanov, V. V., Krivtsun, V. M., Koshelev, K. N., Lopaev, D. V., van der Horst, R. M., Beckers, J., Osorio, E. A., Bijkerk, F.
We used numerical modeling to study the evolution of EUV-induced plasmas in argon and hydrogen. The results of simulations were compared to the electron densities measured by microwave cavity resonance spectroscopy. It was found that the measured ele
Externí odkaz:
http://arxiv.org/abs/1603.08130
Autor:
Astakhov, D. I., Goedheer, W. J., Lee, C. J., Ivanov, V. V., Krivtsun, V. M., Yakushev, O., Koshelev, K. N., Lopaev, D. V., Bijkerk, F.
We have used a combination of numerical modeling and experiments to study carbon etching in the presence of a hydrogen plasma. We model the evolution of a low density EUV-induced plasma during and after the EUV pulse to obtain the energy resolved ion
Externí odkaz:
http://arxiv.org/abs/1507.02705
Autor:
Astakhov, D. I., Goedheer, W. J., Lee, C. J., Ivanov, V. V., Krivtsun, V. M., Zotovich, A. I., Zyryanov, S. M., Lopaev, D. V., Bijkerk, F.
Publikováno v:
Plasma Sources Sci. Technol. 24, 055018 (2015)
Probe theories are only applicable in the regime where the probe's perturbation of the plasma can be neglected. However, it is not always possible to know, a priori, that a particular probe theory can be successfully applied, especially in low densit
Externí odkaz:
http://arxiv.org/abs/1412.3036
Publikováno v:
2015 Plasma Sources Sci. Technol. 24 035003
An experimental setup that directly reproduces Extreme UV-lithography relevant conditions for detailed component exposure tests is described. The EUV setup includes a pulsed plasma radiation source, operating at 13.5 nm; a debris mitigation system; c
Externí odkaz:
http://arxiv.org/abs/1411.4505
Molecular contamination of a grazing incidence collector for extreme ultraviolet (EUV) lithography was experimentally studied. A carbon film was found to have grown under irradiation from a pulsed tin plasma discharge. Our studies show that the film
Externí odkaz:
http://arxiv.org/abs/1411.4509
We have studied the effect of photoelectrons on defect formation in graphene during extreme ultraviolet (EUV) irradiation. Assuming the major role of these low energy electrons, we have mimicked the process by using low energy primary electrons. Grap
Externí odkaz:
http://arxiv.org/abs/1408.5704