Zobrazeno 1 - 10
of 45
pro vyhledávání: '"LARRY F. THOMPSON"'
Autor:
J. E. Hanson, Larry F. Thompson, Elsa Reichmanis, W. W. Tai, Anthony E. Novembre, R. J. West, Janet M. Kometani
Publikováno v:
Polymer Engineering and Science. 32:1476-1480
The X-ray and deep UV radiation response is described for resist systems consisting of poly(4-tert-butoxycarbonyloxystyrene-co-sulfur dioxide) PTBSS combined with an arylmethyl sulfone. A 2: 1 4-tert-butoxycarbonyloxystyrene (TBS): sulfur dioxide (SO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2478a9cafd83ec8ca2757c34233c7cc7
https://doi.org/10.1002/pen.760322006
https://doi.org/10.1002/pen.760322006
Autor:
Elsa Reichmanis, A. E. Novembre, W. W. Tai, Larry F. Thompson, James E. Hanson, Janet M. Kometani, Omkaram Nalamasu, Gary N. Taylor
Publikováno v:
Chemistry of Materials. 4:278-284
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fc561f2dfa20710b2fb1bdec6e347f9
https://doi.org/10.1021/cm00020a012
https://doi.org/10.1021/cm00020a012
Autor:
Larry F. Thompson, Gary N. Taylor, Janet M. Kometani, J. E. Hanson, Elsa Reichmanis, W. W. Tai, Anthony E. Novembre, Omkaram Nalamasu, David N. Tomes
Publikováno v:
Microelectronic Engineering. 17:257-260
The x-ray (λ = 0.8,1.4nm) and deep UV (λ = 248nm) responses of copolymers of TBS and SO 2 are described. Resist sensitivity is shown to improve by addition of an arylmethyl sulfone acid generating species to the formulation, partial deprotection of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::780246609fd4ed1d4f6f0288f18b796c
https://doi.org/10.1016/0167-9317(92)90051-r
https://doi.org/10.1016/0167-9317(92)90051-r
Autor:
Larry F. Thompson, Anthony E. Novembre, W. W. Tai, Janet M. Kometani, James E. Hanson, Elsa Reichmanis
Publikováno v:
Journal of Photopolymer Science and Technology. 5:9-15
Partial deprotection of copolymers of 4-t-butoxycarbonyloxystyrene (TBS) and sulfur dioxide (SO2) during the process prebake step is used to improve the x-ray lithographic performance of this resist. For a 2.6:1 TBS:SO2 single component chemically am
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3029fb6cab5bcb2118d84ab2b47f5cf8
https://doi.org/10.2494/photopolymer.5.9
https://doi.org/10.2494/photopolymer.5.9
Autor:
Elsa Reichmanis, Larry F. Thompson
Publikováno v:
Microelectronic Engineering. 14:215-226
Deep-UV lithography is believed by many to be the “heir-apparent” to g- and/or i-line photolithography for manufacturing devices with features as small as 0.25 gmm. The ultimate success and degree of acceptance of deep-UV depends on many technica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20d1236f153beb0528215c41247c5ed5
https://doi.org/10.1016/0167-9317(91)90007-z
https://doi.org/10.1016/0167-9317(91)90007-z
Autor:
James E. Hanson, W. W. Tai, Omkaram Nalamasu, R. S. Kanga, P. Trevor, Larry F. Thompson, S. A. Heffner, Janet M. Kometani, Elsa Reichmanis
Publikováno v:
Chemistry of Materials. 3:660-667
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19c867fd67047f220791ae52c30d1c1e
https://doi.org/10.1021/cm00016a019
https://doi.org/10.1021/cm00016a019
Publikováno v:
Journal of Photopolymer Science and Technology. 4:299-318
Continued advances in microelectronic fabrication are trying the limits of conventional lithographic technologies [1]. The traditional diazonaphthoquinone/novolac resist materials are not suitable for use with the deep-UV exposure tools both from the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cd85999a2482dacba9ae099cd401e67
https://doi.org/10.2494/photopolymer.4.299
https://doi.org/10.2494/photopolymer.4.299
Autor:
Elsa Reichmanis, Larry F. Thompson
Publikováno v:
AT&T Technical Journal. 69:32-45
In the last decade, major advances in fabricating VLSI electronic devices have placed increasing demands on microlithography, the technology used to generate today's integrated circuits. In 1976, state-of-the-art devices contained several thousand tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eee4baf50b5a5819e0a99d1b62575ce
https://doi.org/10.1002/j.1538-7305.1990.tb00485.x
https://doi.org/10.1002/j.1538-7305.1990.tb00485.x
Autor:
Larry F. Thompson, Elsa Reichmanis, Thomas X. Neenan, T. Chin, Janet M. Kometani, Omkaram Nalamasu, F. M. Houlihan
Publikováno v:
Journal of Photopolymer Science and Technology. 3:259-273
A variety of new 2, 6-dinitrobenzyl sulfonate esters were synthesized and evaluated in terms of thermal stability, quantum yield, and absorbance. The lithographic performance of these novel esters was evaluated in poly(4-(t-butyloxycarbonyloxy)styren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea6e4e347d68dc3e3987426988c9ff6f
https://doi.org/10.2494/photopolymer.3.259
https://doi.org/10.2494/photopolymer.3.259
Autor:
Larry F. Thompson, Thomas X. Neenan, F. M. Houlihan, Bonnie Bachman, Elsa Reichmanis, Janet M. Kometani
Publikováno v:
Macromolecules. 23:145-150
Etude de l'efficacite des esters (triflate, mesylate, pentafluorobenzenesulfonate, etc…) comme photogenerateurs d'acide qui, par chauffage, catalysent l'elimination du groupe protecteur t-BOC du poly (p-t-butoxycarbonyloxy α-methylstyrene). Determ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d9a9ec80994db8199788c111423edfe
https://doi.org/10.1021/ma00203a025
https://doi.org/10.1021/ma00203a025