Zobrazeno 1 - 10
of 83
pro vyhledávání: '"L.Y. Shang"'
Autor:
F. ZHAO, X. SUN, D. LIU, L.Y. SHANG, J.M. LIU, X.Y. LI, S. LI, X.C. LI, Y.Z. WANG, L.J. SU, L.M. ZHANG, Y.Y. MU, L. XIAO, Z. TIAN, C. PAN, B. SUN, H.F. PAN, G.Y.Q. SHANG, H.X. YU, C.X. MA
Publikováno v:
Applied Ecology and Environmental Research. 18:5759-5774
Autor:
L.Y. Shang, L.M. Zhang, C. Pan, Y.Y. Mu, F.Y. Chai, X.Y. Li, S. Li, H.F. Pan, L. Xiao, G.Y.Q. Shang, F. Zhao, L.J. Su, I.E. Shabani, C.X. Ma, T.Y. Yu, Z. Tian, J.M. Liu, H.X. Yu, X. Sun, X.C. Li, Y. Meng, B. Sun, D. Liu, Y.Z. Wang
Publikováno v:
Applied Ecology and Environmental Research. 18:7457-7471
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 97:8-12
In this work, we reported the synthesis of ZnS nanostructures featured a laminated morphology through a feasible chemical vapor deposition process. The microstructure and phase purity of as-synthesized ZnS nanostructures were examined by using an X-r
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 83:114-118
Shubnikov-de Haas (SdH) oscillation measurements at 1.5 K were carried out for In 0.52 Al 0.48 As/In 0.65 Ga 0.35 As heterostructures with different Si delta-doping concentration and spacer thickness. The dominant zero-magnetic field spin splitting m
Influence of Cu ion implantation on the microstructure and cathodoluminescence of ZnS nanostructures
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 81:315-319
The microstructure and optical properties of as-synthesized and Cu ion implanted ZnS nanostructures with branched edges are studied by using high-resolution transmission electron microscope (TEM) and spatially-resolved cathodoluminescence measurement
Autor:
Wu Zhou, L.Y. Shang, Bo Shen, Tie Lin, Ning Tang, Guangyou Yu, J. H. Chu, Kui Han, Junxi Duan
Publikováno v:
Solid State Communications. 151:879-882
The results of an experimental study of quantum correction of electron–electron interaction (EEI) to the conductivity of two-dimensional electron gas (2DEG) in an undoped Al 0.26 Ga 0.74 N/AlN/GaN heterostructure are reported. A small but significa
Publikováno v:
Engineering Fracture Mechanics. 76:1373-1379
This paper illustrates an efficient contour integral procedure to obtain stress intensity factors in combination of the asymptotic analysis with finite element analysis. Note that this set-up is very general: the material can be anisotropic elastic,
Publikováno v:
International Journal of Solids and Structures. 46:1134-1148
This study focuses on the stress intensity factors for free edges in multi-layered structural components. The effects of elastic constants of various material combinations on the weak singularity at free edges are analyzed. Using the H-integral appro
Autor:
Bo Shen, Tie Lin, Kui Han, Xiaowei He, Zhixin Qin, Zhijian Yang, Guoyi Zhang, Chunming Yin, W.Y. Zhou, Junhao Chu, Ning Tang, L.Y. Shang
Publikováno v:
Applied Physics A. 96:953-957
The subband structure and occupation in the triangular quantum well at Al x Ga1−x N/GaN heterointerfaces have been investigated by means of temperature dependent Shubnikov–de Haas (SdH) measurements at low temperatures and high magnetic fields un
Publikováno v:
Journal of Alloys and Compounds. 465:442-445
InAs0.05Sb0.95 thick film with thickness of about 120 μm was grown by modified LPE technique on InAs substrate. The Fourier transform infrared (FTIR) transmission measurement revealed that the cutoff wavelength (defined at the mid-transmittance) is