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pro vyhledávání: '"L.W. Guo"'
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Akademický článek
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Publikováno v:
Journal of dairy science. 103(1)
The volatile flavor substances in traditional fermented yak milk samples collected from 5 ecoregions (A: coniferous forests and grasslands of the Qilian Qingdong Mountains; B: alpine grasslands surrounding the lakes in the Qiangtang Plateau; C: alpin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::121cb6018c8a5e596a1736074331d94f
https://pubmed.ncbi.nlm.nih.gov/31677830
https://pubmed.ncbi.nlm.nih.gov/31677830
Autor:
Mingzeng Peng, Junya Zhang, H Chen, Xiangde Zhu, Naisen Yu, L.W. Guo, Jinyi Yan, J.M. Zhou, Hongpeng Jia
Publikováno v:
Journal of Alloys and Compounds. 473:473-476
The characteristics of silent B-1(H) mode in AlxGa1-xN alloys are studied in detail by the first-order Raman scattering. The B, H mode is observed in disordered AlxGa1-xN alloys when the polarization directions of incident and scattered lights are pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d88c026ac479061d21129402933c49a
https://doi.org/10.1016/j.jallcom.2008.06.007
https://doi.org/10.1016/j.jallcom.2008.06.007
Autor:
Cuimei Wang, Junxue Ran, Jianping Li, Hongling Xiao, Jinmin Li, Weijun Luo, L.W. Guo, Xiaoliang Wang
Publikováno v:
Microelectronics Journal. 39:1710-1713
The effect of thickness of the high-temperature (HT) AlN buffer layer on the properties of GaN grown on Si(111) has been investigated. Optical microscopy (OM), atomic force microscopy (AFM) and X-ray diffraction (XRD) are employed to characterize the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c150cf1be61e82ebf4e9e52f9d7c1ef3
https://doi.org/10.1016/j.mejo.2008.01.042
https://doi.org/10.1016/j.mejo.2008.01.042
Autor:
Weijun Luo, Fuhua Yang, Hongxin Liu, Cuimei Wang, L.W. Guo, Xiaoliang Wang, Yanling Chen, Jianping Li, Hongling Xiao, Jinmin Li, Junxue Ran
Publikováno v:
Microelectronics Journal. 39:1108-1111
AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (111) substrate using metal-organic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b2470e55d15bed6bd884a3f7e801cab
https://doi.org/10.1016/j.mejo.2008.01.083
https://doi.org/10.1016/j.mejo.2008.01.083
Autor:
Weijun Luo, L.W. Guo, Hongling Xiao, Xiaoliang Wang, Junxue Ran, Cuimei Wang, Jinmin Li, Jianping Li
Publikováno v:
Superlattices and Microstructures. 44:153-159
Low temperature (LT) AlN interlayers were used to effectively reduce the tension stress and micro-cracks on the surface of the GaN epilayer grown on Si (111) substrate. Optical Microscopy (OM), Atomic Force Microscopy (AFM), Surface Electron Microsco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a39ceafa4b2d881d825f47db247d8ec9
https://doi.org/10.1016/j.spmi.2008.04.003
https://doi.org/10.1016/j.spmi.2008.04.003
Autor:
Baozhu Wang, L.W. Guo, Cuimei Wang, Weijun Luo, Xiaoyan Wang, Cebao Fang, Xiaoliang Wang, Guoxin Hu, Hongling Xiao, Junxue Ran
Publikováno v:
Microelectronics Journal. 39:777-781
The sheet carrier concentrations, conduction band profiles and amount of free carriers in the barriers have been determined by solving coupled Schrodinger and Poisson equation self-consistently for coherently grown Al"0"."3Ga"0"."7N/GaN and Al"0"."3G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2d65a28e5a6f87c87ee720cf15252e9
https://doi.org/10.1016/j.mejo.2007.12.005
https://doi.org/10.1016/j.mejo.2007.12.005
Autor:
Naisen Yu, Hong Chen, Hongpeng Jia, J.M. Zhou, Jinyi Yan, Lihua Tang, Xiangde Zhu, J L Wang, Mingzeng Peng, L.W. Guo
Publikováno v:
Materials Research Bulletin. 42:1589-1593
In this paper, wing tilt was detected by high resolution X-ray rocking curve for uncoalesced GaN epilayer grown on maskless periodically grooved sapphire fabricated by wet chemical etching. Stress distribution was characterized by the frequency shift
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82948ef0281dd7d10eb4a66aa68df51e
https://doi.org/10.1016/j.materresbull.2006.11.042
https://doi.org/10.1016/j.materresbull.2006.11.042
Autor:
Hong Chen, Junya Zhang, Yumei Wang, Xiangde Zhu, Hongpeng Jia, X.J. Pei, J.M. Zhou, Zhiwei Xing, Zhigang Zhou, Jinyi Yan, L.W. Guo, G.J. Ding
Publikováno v:
Journal of Crystal Growth. 307:35-39
Structural, electrical and optical properties of an improved a-plane GaN films grown on (1 (1) over bar 0 2) r-plane sapphire by metalorganic chemical vapor deposition (MOCVD) with a low-temperature and a high-temperature AlN buffer layers were revea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fcf0ecb4f8cf1830a97e96f4f563277
https://doi.org/10.1016/j.jcrysgro.2007.06.019
https://doi.org/10.1016/j.jcrysgro.2007.06.019