Zobrazeno 1 - 10
of 82
pro vyhledávání: '"L.T. Lin"'
Akademický článek
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Akademický článek
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Publikováno v:
International Journal of Refractory Metals and Hard Materials. 28:297-300
A series of boron carbide (B 4 C) matrix composites with different contents of Al, were synthesized by reaction hot-press sintering with milled B 4 C and pure metallic Al powder at 1600 °C for 1 h. X-ray diffraction (XRD), scanning electron microsco
Akademický článek
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Publikováno v:
The International Journal of Advanced Manufacturing Technology. 19:510-515
Rapid sheet metal manufacturing (RSMM) is a closed loop process for making sheet metal products which uses advanced computer-aided techniques and computer-controlled machines to produce non-ferrous tooling directly or indirectly. The tooling would be
Autor:
Hun-Jan Tao, H. C. Lin, Huan-Just Lin, Lee Chia-Fu, P.C. Yen, C.H. Huang, Yuan-Hung Chiu, W.S. Huang, C. C. Wu, King-Yuen Wong, Chun Chen, Stock Chang, Wang Shiang-Bau, Li-Shiun Chen, S.W. Chuang, Po-Kang Wang, Ming-Jie Huang, X.F. Yu, S.Y. Ku, Chien-Chao Huang, M.L. Cheng, Yung-Huei Lee, K. F. Yu, T.H. Li, C.M. Wu, Y. C. Peng, C.H. Tsai, Y.C. Lin, Tsz-Mei Kwok, Yi-Chun Huang, P.S. Lim, T.C. Gan, Tzong-Lin Wu, K.Y. Hsu, L.Y. Yang, S.S. Lin, L.W. Weng, T.H. Hsieh, F.K. Yang, C.T. Chan, Eric Ou-Yang, P.C. Hsieh, Derek Lin, S.B. Wang, Ming-Jer Chen, A. Keshavarzi, Chih-Yuan Lu, Chuan-Ping Hou, L.T. Lin, J.L. Yang, Yuh-Jier Mii, Chien-Chang Su, J.H. Chen, Hsieh Ching-Hua, Huan-Neng Chen, Y.W. Tseng, C. P. Lin, Chou Chun-Hao, A.S. Chang, Tseng Chien-Hsien, S.H. Liao, Tsung-Lin Lee, M. Cao
Publikováno v:
2010 International Electron Devices Meeting.
A high performance 22/20nm CMOS bulk FinFET achieves the best in-class N/P I on values of 1200/1100 µA/µm for I off =100nA/µm at 1V. Excellent device electrostatic control is demonstrated for gate length (L gate ) down to 20nm. Dual-Epitaxy and mu
Autor:
F.L. Hsiao, W.Y. Lien, C.T. Li, Y.C. Sun, T.L. Chen, K.C. Wu, Y.H. Chiu, H.J. Tao, C.H. Huang, K.H. Chen, P.W. Wang, C.H. Wu, L.T. Lin, Yuh-Jier Mii, H.C. Tuan, Y.H. Liu, I.L. Wu, H.C. Lo, D.H. Lee, W.Y. Lu, C.F. Cheng, K.Y. Chen, S.K.H. Fung
Publikováno v:
2007 IEEE International Electron Devices Meeting.
45 nm SOI CMOS technology target for high performance CPU application is reported. Process induced strained CMOS demonstrates 1232/855 uA/um DC Ion at 100 nA/um Ioff under Vdd=lV, which is the highest ever reported performance at 45 nm ground rule fo
Autor:
W. Chang, P.W. Wang, Ming-Ta Lei, K. Goto, H.C. Hsieh, C.H. Diaz, W.Y. Lien, S.C. Wang, H.Y. Huang, Hun-Jan Tao, Y.H. Chang, C.H. Yeh, L.T. Lin, D.Y. Lee, C.C. Wu, S.P. Fu, Y.H. Chiu, J.H. Chen, M.H. Hsieh, Y.P. Wang, C.T. Lin, Che-Min Chu, H.H. Lin, S.Y. Lu, Y.J. Mii, S.J. Yang, Chun-Kuang Chen, C.F. Nieh, Y.Y. Tarng, Kuan-Lun Cheng, M. Cao, Chii-Ming Wu, H.C. Tuan, D.W. Lin, M.J. Huang, F.C. Chen, C.M. Liu, M.Y. Wang
Publikováno v:
2007 IEEE International Electron Devices Meeting.
A highly scaled, high performance 45 nm CMOS technology utilizing extensive immersion lithography to achieve the industry's highest scaling factor with ELK (k=2.55) BEOL is presented. A record gate density 2.4X higher than that of 65 nm is achieved.
Autor:
S.K.H. Fung, Y. Jin, S.W. Wang, Y.Y. Yao, C.M. Chu, S.C. Chen, Y.P. Wang, T.C. Ong, W.J. Liang, C.H. Wang, S.Y. Wu, C.F. Nieh, S.M. Jang, K.F. Yu, Y.C. Sun, S.J. Chang, C.Y. Lin, C.Y. Fu, T.L. Lee, C.C. Chen, M.S. Liang, L.T. Lin, K.L. Cheng, C.C. Wu, S.M. Cheng, Y.H. Chiu, S.J. Yang, Y.C. See, H.T. Huang, Carlos H. Diaz, H.J. Tao, Y.K. Leung
Publikováno v:
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
This paper presents a state-of-the-art 65nm CMOS transistor technology using 300mm bulk substrate. Device offering is classified as High Speed (HS), General Purpose (G) and Low Power (LP) so as to cover the whole foundry application space with variou
Publikováno v:
MRS Proceedings. 516
The 1 µm-wide Al-0.5wt%Cu/TiN/Ti interconnect, on the oxidized Si(100) wafer without Al sputtering pretreatment on the SiO2 surface prior to Ti deposition, failed after stressing with a current density of 1 × 106 A/cm2 for 190 hr at 175°C. In cont