Zobrazeno 1 - 10
of 34
pro vyhledávání: '"L.S. Okaevich"'
Publikováno v:
Semiconductors. 41:612-615
It is shown that, in spite of the linearity of current-voltage characteristics of ionizing-radiation detectors based on semi-insulating GaAs compensated with Cr, the charge transport in these detectors is controlled by the barrier contacts at the ano
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::383282cdcf2492f55fca250e305abeac
https://doi.org/10.1134/s1063782607050235
https://doi.org/10.1134/s1063782607050235
Autor:
O. P. Tolbanov, V.P. Germogenov, O.G. Shmakov, L.S. Okaevich, G.I. Ayzenshtat, A. P. Vorobiev, S.M. Guschin
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 531:97-102
The growth of GaAs epitaxial structures for X- and γ-ray detectors and the device characteristics have been investigated. Conditions of reproducible LPE growth of GaAs layers more than 100 μm thick on substrates of 40 μm diameter have been establi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ac9dde9d60a1becf5af7886991cee23
https://doi.org/10.1016/j.nima.2004.05.100
https://doi.org/10.1016/j.nima.2004.05.100
Autor:
D.L. Budnitsky, D.Y. Mokeev, V. A. Novikov, A. V. Tyazhev, G.I. Ayzenshtat, O.B. Koretskaya, O.P. Tolbanov, L.S. Okaevich
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 531:121-124
We present first results obtained with pad detectors processed from 3 inch diameter GaAs wafers compensated with Cr. The detector characteristics are analyzed from the point of view of uniformity across the wafer.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6066a3a986f50f0874c5ce7a5d5f6c7
https://doi.org/10.1016/j.nima.2004.05.103
https://doi.org/10.1016/j.nima.2004.05.103
Autor:
A. V. Tyazhev, D.L. Budnitsky, O.B Koretskay, O. P. Tolbanov, A.I. Potapov, A. P. Vorobiev, L.S. Okaevich, V. A. Novikov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 509:34-39
Unlike conventional GaAs detector structures that use a space charge region (SCR) of a barrier structure, we propose to form a detector structure of resistor type made of GaAs compensated with Cr. In this case, the electric field distribution, ξ(x),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fea2d35e17bda6499c3e07cc16dccfd
https://doi.org/10.1016/s0168-9002(03)01545-6
https://doi.org/10.1016/s0168-9002(03)01545-6
Autor:
A.P. Vorobiev, L.S. Okaevich, V. A. Novikov, O.B. Koretskaya, A.I. Ayzenshtat, A. V. Tyazhev, A.I. Potapov, D.L. Budnitsky, O.P. Tolbanov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 494:120-127
Among the possible semiconductor materials for ionizing radiation detectors, GaAs looks very promising due to its high carrier mobility, wide band gap and high density. A comparative analysis of physical and electrical characteristics of GaAs semi-in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38600bf0541cf01127ad0ca6563d6bbe
https://doi.org/10.1016/s0168-9002(02)01455-9
https://doi.org/10.1016/s0168-9002(02)01455-9
Autor:
V. A. Novikov, A.P. Vorobiev, A. V. Tyazhev, A.I. Potapov, O.P. Tolbanov, G.I. Ayzenshtat, O.B. Koretskaya, L.S. Okaevich, D.L. Budnitsky
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 487:96-101
Unlike conventional GaAs detector structures, which operation is based on the use of a space charge region of a barrier structure, we propose to form a detector structure of resistor type. In this case, the electric field distribution, ξ ( x ), is n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24c4bde3795b9d8b193d94cac1d25c75
https://doi.org/10.1016/s0168-9002(02)00951-8
https://doi.org/10.1016/s0168-9002(02)00951-8
Autor:
E. P. Drugova, L.P. Porokhovnichenko, O.B. Koretskaya, A.I. Potapov, D.L. Budnitsky, V.P. Germogenov, N.N. Bakin, L.S. Okaevich, A. V. Tyazhev, S.S. Khludkov, A.P. Vorobiev, G.I. Ayzenshtat, Kevin M. Smith, O.P. Tolbanov, M. D. Vilisova
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 466:25-32
A comparative analysis of characteristics of detector structures fabricated by means of technology of epitaxial growth of an undoped high-resistive GaAs layer as well as structures based on SI-GaAs compensated with Cr during a diffusion process is pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3242b68fad96e852ca7a9a0fc8a65973
https://doi.org/10.1016/s0168-9002(01)00820-8
https://doi.org/10.1016/s0168-9002(01)00820-8
Autor:
L.S. Okaevich, A.V. Khan, O.B. Koretskaya, A. V. Tyazhev, A.I. Potapov, G.I Aizenshtadt, V.G. Kanaev, S.S. Khludkov, O. P. Tolbanov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 448:188-191
The article presents results of investigation of interaction of the structures based on GaAs compensated by interaction of the deep centers with ionizing radiation of a wide spectral range. The structures are able to record single quantum of electrom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c790d5da7d5e8d4481b69fc61e136cac
https://doi.org/10.1016/s0168-9002(99)00734-2
https://doi.org/10.1016/s0168-9002(99)00734-2
Publikováno v:
2005 Siberian Conference on Control and Communications.
In the paper, studies of volt-ampere and volt-luxing characteristics of the detector structures based on gallium arsenide, compensated by chromium are carried out. It is shown that metallic contacts to a structure are barrier for electrons. One of co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1adad488e248da708076bc29ea3cf78
https://doi.org/10.1109/sibcon.2005.1611198
https://doi.org/10.1109/sibcon.2005.1611198
Autor:
A.I. Potapov, V. A. Novikov, O.B. Koretskaya, L.S. Okaevich, O.P. Tolbanov, D.L. Budnitsky, A.I. Ayzenshtat, A. V. Tyazhev, A.P. Vorobiev
Publikováno v:
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002..
Among prospect semiconductor materials for ionizing radiation detectors, GaAs looks very promising due to it high carrier mobility, wide band gap and high density. A comparative analysis of physical and electrical characteristics of GaAs semi-insulat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7733fd875da5d9ba58ff7ce0d8a9a678
https://doi.org/10.1109/sim.2002.1242721
https://doi.org/10.1109/sim.2002.1242721