Zobrazeno 1 - 10
of 29
pro vyhledávání: '"L.S. Driscoll"'
Autor:
L.S. Driscoll, Anthony O'Neill, Douglas J. Paul, Sarah H. Olsen, Sanatan Chattopadhyay, K.S.K. Kwa, Matthew J. Temple
Publikováno v:
Thin Solid Films. 508:338-341
The benefit of high performance strained Si CMOS in terms of technology generations is quantified. It is shown that a 0.3 μm gate length strained Si/Si 0.75 Ge 0.25 CMOS technology has the same gate delay as conventional technology having an effecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::affa6bc884315a36f6647e6fa0b8e364
https://doi.org/10.1016/j.tsf.2005.07.347
https://doi.org/10.1016/j.tsf.2005.07.347
Autor:
Anthony O'Neill, A. G. Cullis, Sarah H. Olsen, D. J. Norris, L.S. Driscoll, Sanatan Chattopadhyay, Douglas J. Paul, K.S.K. Kwa
Publikováno v:
IEEE Transactions on Electron Devices. 51:1245-1253
Results comparing strained-Si-SiGe n-channel MOSFET performance of single-and dual-surface channel devices fabricated using 15% Ge content SiGe virtual substrates are presented. Device fabrication used high thermal budget processes and virtual substr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f7a426838d3a878ca81ef3e05fbad03
https://doi.org/10.1109/ted.2004.830652
https://doi.org/10.1109/ted.2004.830652
Autor:
K.S.K. Kwa, L.S. Driscoll, Anthony O'Neill, Jing Zhang, Sarah H. Olsen, Sanatan Chattopadhyay, A.M. Waite, Y.T. Tang, A.G.R. Evans
Publikováno v:
IEEE Transactions on Electron Devices. 51:1156-1163
On-state and off-state performance of strained-Si-SiGe n-channel MOSFETs have been investigated as a function of SiGe virtual substrate alloy composition. Performance gains in terms of on-state drain current and maximum transconductance of up to 220%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25760779a7d00df0db9515f1fb593c14
https://doi.org/10.1109/ted.2004.830656
https://doi.org/10.1109/ted.2004.830656
Autor:
Steve Bull, K.S.K. Kwa, Sanatan Chattopadhyay, D. J. Norris, A.M. Waite, Y.T. Tang, L.S. Driscoll, A.G.R. Evans, Anthony O'Neill, A. G. Cullis, Sarah H. Olsen
Publikováno v:
Materials Science and Engineering: B. 109:78-84
The performance of surface channel MOS devices depends on gate oxide interface quality. Carrier transport is enhanced in strained Si, thus its use for MOSFET channels can increase device performance. Thermal oxidation produces the highest quality Si0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f699d21c68735a9b1fad4539f3f49323
https://doi.org/10.1016/j.mseb.2003.10.051
https://doi.org/10.1016/j.mseb.2003.10.051
Autor:
K.S.K. Kwa, D. J. Robbins, L.S. Driscoll, Sarah H. Olsen, D. J. Norris, Jing Zhang, A. G. Cullis, Anthony O'Neill, Sanatan Chattopadhyay
Publikováno v:
Semiconductor Science and Technology. 19:707-714
The enhanced electrical performance of dual quantum well strained Si/SiGe n-channel MOSFETs has been investigated as a function of SiGe material quality. The higher electron mobility in strained Si compared with bulk Si has been translated into perfo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96e0e485bf6be65cf235b21bdeab478e
https://doi.org/10.1088/0268-1242/19/6/008
https://doi.org/10.1088/0268-1242/19/6/008
Autor:
D. J. Robbins, K.S.K. Kwa, L.S. Driscoll, V. Higgs, Jing Zhang, Sanatan Chattopadhyay, Sarah H. Olsen, Anthony O'Neill
Publikováno v:
Journal of Applied Physics. 94:6855-6863
Strained Si/SiGe n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated using a dual quantum well structure. The heterostructure is designed for maximum performance from both n- and p-channel devices using a singl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d9d45c720e950fcba8b73c25a0fcc4e
https://doi.org/10.1063/1.1619197
https://doi.org/10.1063/1.1619197
Publikováno v:
Semiconductor Science and Technology. 18:738-744
Capacitance–voltage (C–V) characteristics are used to investigate double heterojunction strained Si/SiGe MOS capacitors. Structures of this type potentially form the channels of CMOS devices based on the strained Si/SiGe material system. The tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdf85060c1ae3f9cc5c561b95ffd5346
https://doi.org/10.1088/0268-1242/18/8/304
https://doi.org/10.1088/0268-1242/18/8/304
Autor:
Anthony O'Neill, Sarah H. Olsen, Sanatan Chattopadhyay, K.S.K. Kwa, L.S. Driscoll, Nebojsa Jankovic
Publikováno v:
Semiconductor Science and Technology. 18:82-87
A capacitance model is developed and a correction formula is derived to reconstruct the intrinsic oxide capacitance value from measured capacitance and conductance of lossy MOS devices. Due to discrepancies during processing, such as cleaning, an unw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4afe04eeee6ac9d5ce2ea91bfe1941aa
https://doi.org/10.1088/0268-1242/18/2/303
https://doi.org/10.1088/0268-1242/18/2/303
Autor:
S. Chattopadhay, Jing Zhang, K.S.K. Kwa, Anthony O'Neill, L.S. Driscoll, Douglas J. Paul, Sarah H. Olsen
Publikováno v:
International Semiconductor Device Research Symposium, 2003.
The performance of single and dual channel strained Si n-MOSFETs fabricated using CMOS process. A TEM image of the strained Si/gate oxide interface was examined. Capacitance-voltage measurement on MOS capacitor was investigated. The gate oxide interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db82b3562c9303556fa1f4daf6f5abf9
https://doi.org/10.1109/isdrs.2003.1271990
https://doi.org/10.1109/isdrs.2003.1271990
Publikováno v:
Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710).
It is demonstrated from experimental I-V and C-V data, and confirmed by computer simulation, that strained Si/SiGe MOSFET performance severely degrades below a channel thickness of 7 nm. MOSFETs with strained Si channels of thickness 5 nm, 7 nm and 9
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24d001d99c428c96d6b4ed9cbc3363cd
https://doi.org/10.1109/essderc.2003.1256923
https://doi.org/10.1109/essderc.2003.1256923