Zobrazeno 1 - 10
of 47
pro vyhledávání: '"L.M. Kapitanchuk"'
Autor:
Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, N.I. Berezovska, O.S. Lytvyn, L.M. Kapitanchuk, A.M. Svetlichnyi
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 21, Iss 4, Pp 360-364 (2018)
In this paper, we consider the effect of rapid thermal annealing (RTA) on the properties of Dy 2 O 3 film formed on the surface of a substrate with a por-SiC/SiC structure. The atomic composition of the films under study was analyzed as a function of
Externí odkaz:
https://doaj.org/article/120bac08c1f54270b6e2eff0b7b8b92f
Autor:
Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, N.I. Berezovska, L.M. Kapitanchuk, A.M. Svetlichnyi
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 20, Iss 4, Pp 465-469 (2017)
The comparative analysis of optical characteristics inherent to Er2O3/SiC and Er2O3/por-SiC/SiC structures has been performed. It has been shown that, regardless the substrate on which the Er2O3 film is formed, an increase in the rapid thermal anneal
Externí odkaz:
https://doaj.org/article/c39eef5684f4415aa9809dc0557b9de8
Publikováno v:
Український стоматологічний альманах, Iss 1, Pp 11-15 (2015)
Introduction. The lowest level of mineralization of hard dental tissues is observed during the first year after teeth eruption. This is confirmed by significant increase of prevalence and intensity of caries in permanent teeth from 6 to 15 years. Ena
Externí odkaz:
https://doaj.org/article/d1c39d8518d94d2abd95f9072eba240a
Autor:
A. V. Zviagintseva, O. P. Karasevska, І. V. Nesina, B.A. Zadery, I.S. Gakh, K.A. Yushchenko, L.M. Kapitanchuk
Publikováno v:
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII. 43:1175-1193
Publikováno v:
The Paton Welding Journal. 2020:34-40
Publikováno v:
Avtomatičeskaâ svarka (Kiev). 2020:38-44
Autor:
Yu.M. Kondratovych, Yu. V. Kobljanskyj, Hao Wang, L.M. Kapitanchuk, Lei Wu, I.V. Zavislyak, O.I. Hetman, A. Bykov, Rong Li
Publikováno v:
Powder Metallurgy and Metal Ceramics. 58:514-522
The electrical properties of two highly absorbing AlN–SiC composites are compared at a frequency of 10.3 GHz. To estimate the dielectric constant and dielectric loss tangent of these highly absorbing materials, the method involving a partially fill
Autor:
I. O. Kruhlov, Sergey I. Sidorenko, T. Ishikawa, Zoltán Erdélyi, L.M. Kapitanchuk, S. M. Voloshko
Publikováno v:
2020 IEEE 40th International Conference on Electronics and Nanotechnology (ELNANO).
The influence of the 25-nm-thick Cr and V barrier layer on the diffusion and chemical composition formation in Ni/Cu bilayer films under annealing conditions was studied. Cu-Ni solid solution formation onset was found in both cases after annealing at
Publikováno v:
The Paton Welding Journal. 2018:2-6
Publikováno v:
Journal of Achievements in Materials and Manufacturing Engineering. 2:49-55
Purpose: To determine the temperature conditions of sulphur and phosphorus moving to sample surface for alloys with different initial sulphur content. Design/methodology/approach: Investigation of samples from In 690, Kh20N16AG6, In52MSS alloys in Au