Zobrazeno 1 - 10
of 51
pro vyhledávání: '"L.M. Jelloian"'
Autor:
April S. Brown, Gabriel M. Rebeiz, L.D. Nguyen, Linda P. B. Katehi, Lawrence E. Larson, L.M. Jelloian, M. Thompson, S.E. Rosenbaum, Mehran Matloubian, B.K. Kormanyos
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 43:927-932
We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlInAs/GaInAs/InP HEMT's. These results are believed to be the highest frequency three-terminal oscillators reported to date. The indium concentrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fe134f24f6339b4352f2a6b5d108010
https://doi.org/10.1109/22.375256
https://doi.org/10.1109/22.375256
Autor:
April S. Brown, L.D. Nguyen, Lawrence E. Larson, L.M. Jelloian, M.A. Thompson, M.J. Delaney, J.E. Pence, Mehran Matloubian, R.A. Rhodes
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 41:2206-2210
The authors report on the state-of-the-art power performance of InP-based HEMTs (high electron mobility transistors) at 59 GHz. Using a 448- mu m-wide HEMT with a gate length of 0.15 mu m, an output power of 155 mW with a 4.9-dB gain and a power-adde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ba165dd29795cc928e26e312e9b1faa
https://doi.org/10.1109/22.260707
https://doi.org/10.1109/22.260707
Autor:
Adele E. Schmitz, M.A. Thompson, Lawrence E. Larson, L.M. Jelloian, M. Lui, L.D. Nguyen, S.E. Rosenbaum, U. Mishra
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 6:380-383
The fabrication, characterization, and statistical analysis of the performance and yield of AlInAs-GaInAs on InP low-noise high electron mobility transistors (HEMTs) with subquarter-micron T-gates fabricated with electron beam lithography are reporte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcd46e43a3607bae4cf26f18b3d54fee
https://doi.org/10.1109/66.267657
https://doi.org/10.1109/66.267657
Publikováno v:
IEEE Transactions on Electron Devices. 39:2007-2014
The design and fabrication of a class of 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors (HEMTs) with potential for ultra-high-frequency and ultra-low-noise applications are reported. These devices exhibit an ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1082b34ca2928478c9fe0c3a178e3499
https://doi.org/10.1109/16.155871
https://doi.org/10.1109/16.155871
Autor:
M.A. Thompson, L.M. Jelloian, L.D. Nguyen, M.A. Melendes, April S. Brown, C.E. Hooper, M.J. Delaney, U.K. Mishra, Lawrence E. Larson
Publikováno v:
International Technical Digest on Electron Devices Meeting.
The scaling of the vertical dimensions of 0.15- mu m-gate-length Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.47/In/sub 0.53/As high-electron-mobility transistors (HEMTs) to reduce their well-known excessive gate leakage current, premature breakdown voltage,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f5fe97e162e0e0147c9625a6d19e814
https://doi.org/10.1109/iedm.1989.74238
https://doi.org/10.1109/iedm.1989.74238
Publikováno v:
International Technical Digest on Electron Devices Meeting.
A novel self-aligned technique for 0.15- mu m-gate-length HEMTs (high electron mobility transistors) has been demonstrated. This technology uses a 0.15- mu m-long T-gate structure defined by e-beam lithography with a SiO/sub 2/ sidewall to implement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a101aea6c81625581a9eb9136f8218e
https://doi.org/10.1109/iedm.1989.74237
https://doi.org/10.1109/iedm.1989.74237
Publikováno v:
IEEE Electron Device Letters. 15:172-174
In this letter we report on the DC and RF performance of InP-based HEMT's with Al/sub 0.48/In/sub 0.52/As/sub x/P/sub 1-x/ Schottky layers and GaInAs/InP composite channels. By replacing the Al/sub 0.48/In/sub 0.52/As Schottky layer with Al/sub 0.48/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96a4b95c1e09f31d115f91678ea8649c
https://doi.org/10.1109/55.291596
https://doi.org/10.1109/55.291596
Autor:
M.J. Delaney, R. Rhodes, Lawrence E. Larson, L.D. Nguyen, M.A. Thompson, Mehran Matloubian, L.M. Jelloian, April S. Brown, J.E. Pence
Publikováno v:
1993 IEEE MTT-S International Microwave Symposium Digest.
The authors report on the state-of-the-art power performance of InP-based HEMTs (high electron mobility transistors) at 59 GHz. Using a 448- mu m-wide HEMT with a gate-length of 0.15 mu m, an output power of 155 mW with a 4.9-dB gain and a power-adde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51c3c60c1a7b6ac0513ab45bfe3c0b6f
https://doi.org/10.1109/mwsym.1993.276882
https://doi.org/10.1109/mwsym.1993.276882
Publikováno v:
Proceedings of IEEE International Electron Devices Meeting.
In this paper we report on record breakdown voltages for high-performance InP-based HEMTs. We have obtained gate-to-drain breakdown voltages of as high as 59 V (measured at 1 mA/mm of gate current) for a 500 ym wide InP-based HEMT with a gate-length
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19fdfcf83f84c83592c161ae746acad7
https://doi.org/10.1109/iedm.1993.347251
https://doi.org/10.1109/iedm.1993.347251
Autor:
M. Lui, A. Kurdoghlian, M.J. Delaney, Lawrence E. Larson, J.E. Pence, R.A. Rhodes, L.M. Jelloian, Takyiu Liu, L.D. Nguyen, M.A. Thompson, Mehran Matloubian, April S. Brown, J.J. Brown, W. Lam
Publikováno v:
Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.
The authors have conducted a systematic effort to improve the breakdown voltage of InP-based HEMTs without compromising their high frequency performance, and have demonstrated millimeter wave circuit results that are comparable to or exceed those of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8006b0ed57ecbb3241b03ed8017fc7b9
https://doi.org/10.1109/cornel.1993.303126
https://doi.org/10.1109/cornel.1993.303126