Zobrazeno 1 - 2
of 2
pro vyhledávání: '"L.K. Swanson 1"'
Autor:
P. Fiorenza 1, M. Vivona 1, L.K. Swanson 1, F. Giannazzo 1, C. Bongiorno 1, S. Di Franco 1, S. Lorenti 2, A. Frazzetto 2, T. Chassagne 3, F. Roccaforte 1
Publikováno v:
Materials science forum 806 (2015): 143–147. doi:10.4028/www.scientific.net/MSF.806.143
info:cnr-pdr/source/autori:P. Fiorenza 1, M. Vivona 1, L.K. Swanson 1, F. Giannazzo 1, C. Bongiorno 1, S. Di Franco 1, S. Lorenti 2, A. Frazzetto 2, T. Chassagne 3, F. Roccaforte 1/titolo:Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3/doi:10.4028%2Fwww.scientific.net%2FMSF.806.143/rivista:Materials science forum/anno:2015/pagina_da:143/pagina_a:147/intervallo_pagine:143–147/volume:806
info:cnr-pdr/source/autori:P. Fiorenza 1, M. Vivona 1, L.K. Swanson 1, F. Giannazzo 1, C. Bongiorno 1, S. Di Franco 1, S. Lorenti 2, A. Frazzetto 2, T. Chassagne 3, F. Roccaforte 1/titolo:Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3/doi:10.4028%2Fwww.scientific.net%2FMSF.806.143/rivista:Materials science forum/anno:2015/pagina_da:143/pagina_a:147/intervallo_pagine:143–147/volume:806
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::804750875e15e43c359f713520d2c8eb
https://publications.cnr.it/doc/298575
https://publications.cnr.it/doc/298575
Autor:
F. Roccaforte 1, P. Fiorenza 1, F. Giannazzo 1, L.K. Swanson 1, M. Vivona 1, A. Frazzetto 2, M. Saggio 2
Publikováno v:
37th European Workshop on Compound Semiconductor Devices and Integrated Circuits-WOCSDICE2013, pp. 51–52, Warnemuende (Germany), May26th-29th, 2013
info:cnr-pdr/source/autori:F. Roccaforte 1, P. Fiorenza 1, F. Giannazzo 1, L.K. Swanson 1, M. Vivona 1, A. Frazzetto 2, M. Saggio 2/congresso_nome:37th European Workshop on Compound Semiconductor Devices and Integrated Circuits-WOCSDICE2013/congresso_luogo:Warnemuende (Germany)/congresso_data:May26th-29th, 2013/anno:2013/pagina_da:51/pagina_a:52/intervallo_pagine:51–52
info:cnr-pdr/source/autori:F. Roccaforte 1, P. Fiorenza 1, F. Giannazzo 1, L.K. Swanson 1, M. Vivona 1, A. Frazzetto 2, M. Saggio 2/congresso_nome:37th European Workshop on Compound Semiconductor Devices and Integrated Circuits-WOCSDICE2013/congresso_luogo:Warnemuende (Germany)/congresso_data:May26th-29th, 2013/anno:2013/pagina_da:51/pagina_a:52/intervallo_pagine:51–52
This paper reports on the influence of the processing conditions on the behaviour of 4H-SiC MOSFETs. The impact of the SiC surface morphology (i.e., processing-induced roughness) and the effects of different post-deposition-annealing (PDA) of the gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::17f9986b3e18b0e691718c695a4aecd2
https://publications.cnr.it/doc/275326
https://publications.cnr.it/doc/275326