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pro vyhledávání: '"L.K. Nanvpr"'
Publikováno v:
1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105).
High power excimer laser annealing is used to activate dopants implanted in polysilicon layers. Sheet resistances as low os 50 /spl Omega///spl square/ are achieved for thin polysilicon layers on oxide, and low ohmic contacts have been produced to im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::463220445010e9fe34cf19deec572d36
https://doi.org/10.1109/icsict.1998.785811
https://doi.org/10.1109/icsict.1998.785811
